Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Permanent URI for this collectionhttps://hdl.handle.net/11147/4719
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Article Citation - WoS: 5Citation - Scopus: 4The Effect of Annealing Temperature on the Optical Properties of a Ruthenium Complex Thin Film(Elsevier Ltd., 2016) Ocakoğlu, Kasım; Okur, Salih; Aydın, Hasan; Emen, Fatih Mehmet; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyThe stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10- 5 eV/K. Furthermore, the thermal analysis studies were carried out in the range 298-673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298-673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO2, CO molecules and SO3H group was eliminated between 614 K and 666 K.Article Citation - WoS: 6Citation - Scopus: 7Thin Film Like Terahertz Bolometric Detector on Bi2212 Single Crystal(Springer Verlag, 2016) Semerci, Tuğçe; Demirhan, Yasemin; Demirhan, Yasemin; Wang, Huabing; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this study, we developed a microbolometer chip fabricated from high temperature superconducting Bi2Sr2CaCu2O8+δ (Bi2212) single crystals for the terahertz (THz) detection. For the manufacturing of the microbolometer chips, Bi2212 single crystals were transferred on substrate in the thin film like form and electron beam lithography, ion beam etching techniques were used. Resistance versus temperature behavior of the bolometer chips were performed by four probe technique in liquid nitrogen cryostat. Bi2212 microchips were integrated and characterized using in our custom-designed cryogenic bolometer system instead of expensive and massive cooling systems. The fabricated microchips significantly detected signals from the Stefan-Boltzmann lamp which includes a portion of THz radiation. The detected power and response time were studied for Bi2212 thin film like microbolometer chips. Our results demonstrated the feasibility of improved Bi2212 microchips could be used for bolometric detection for THz applications.Article Citation - WoS: 6Citation - Scopus: 6Influence of Buffer Layers on Ni Thin Film Structure and Graphene Growth by Cvd(IOP Publishing Ltd., 2015) Özçeri, Elif; Selamet, Yusuf; Selamet, Yusuf; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyBuffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the dewetting effect and surface roughness of Ni catalyst film. Thin adhesive (Cr) layers with or without Al2O3 buffer layers increased the texturing in (1 1 1) orientation, which was promoted by growing at an elevated temperature (450 °C). The effects of pretreatment and growth temperature on crystal orientation, grain size and surface roughness of Ni film were analyzed. Our results indicated a large positive correlation coefficient between the film thickness and surface roughness for thinner and non-buffered films, and a negative correlation coefficient between the thickness and 900 °C -annealed film roughness for thicker and buffered films. The graphene coverage was greatly improved over the films grown with Al2O3 and/or Cr layers. In summary, we suggest that growing high quality, large area, 1- or 2-layer graphene on polycrystalline Ni transition metal thin film is optimized by using Al2O3 and/or Cr layers to reduce Ni dewetting, surface roughness, and groove depth while controlling grain size and texturing in (1 1 1) orientation by annealing at 900 °C.Article Multiferroic Materials: Physics and Properties(Elsevier Ltd., 2016) Buurma, A. J. C.; Adem, Umut; Palstra, T. T. M.; Adem, Umut; 03.09. Department of Materials Science and Engineering; 03. Faculty of Engineering; 01. Izmir Institute of TechnologyMultiferroics are materials in which magnetism and ferroelectricity coexist. They are of fundamental interest to understand electronic behavior coupling magnetic interactions and electric dipolar order. Moreover, they are of applied interest because they allow various types of novel magnetic and electric device structures. We distinguish two important classes of multiferroic materials and discuss mechanisms and materials belonging to each class separately. In the first group of multiferroics, magnetization and polarization arise independently from each other. In the second category of multiferroics, ferroelectricity is induced by magnetic order, resulting in strong magnetoelectric coupling. We also briefly discuss multiferroic thin film heterostructures showing interfacial magnetoelectric coupling interactions with potential applications in memory devices.