Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği

Permanent URI for this collectionhttps://hdl.handle.net/11147/4719

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Author: search.filters.author.Can, MustafaScopus Q: search.filters.scopusQuartile.Q2

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  • Article
    Citation - WoS: 1
    Investigation of the Electrical Parameters of the Organic Diode Modified With 4-[(3 Benzoic Acid
    (Electrochemical Society, Inc., 2016) Havare, A. Kemal; Can, Mustafa; Yağmurcukardeş, Nesli; Yiğit, Mesude Zeliha; Aydın, Hasan; Okur, Salih; Demiç, Şerafettin; İçli, Sıddık
    4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) self-assembled monolayer (SAM) molecules as hole injection is formed on p and n type Si and on indium-tin oxide (ITO) electrodes to investigate the effect on the electrical parameters of hole only organic device. The hole mobility improvement of organic device was attributed to an intermediate energy level formed between hole transport materials (HTL) (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine -NPB) and ITO when forming an ultrathin MPPBA layer, leading to increase of carrier mobility of the device. Space charge limited current (SCLC) technique is used to estimate the mobility of the NPB formed at the interface metal/organic Ohmic contact. The hole mobility of ITO/NPB/Al and ITO/MPPBA/NPB/Al devices were obtained as 1.80 x 10(-6) and 1.76 x 10(-3) cm(2)/Vs, at 1350 E (V/cm)(1/2) applied electric field, respectively. SAM modified devices has lower barrier height values. The electronic characteristic parameters of the ITO/(with or without MPPBA)/NPB/Al, Au/n-Si(or p-Si)/(with or without MPPBA)/Au contacts were calculated using current-voltage (I-V) measurements by Schottky type carrier injection. (C) The Author(s) 2016. Published by ECS.
  • Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance
    (Electrochemical Society, Inc., 2016) Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, Yusuf
    Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.