Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Permanent URI for this collectionhttps://hdl.handle.net/11147/4719
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Article Citation - WoS: 3Citation - Scopus: 3Amperometric Detection of Nh3 by Aromatic Sam-Modified Graphene(IEEE, 2023) Yağmurcukardeş, Nesli; Bayram, Abdullah; Aydın, Hasan; Can, Mustafa; Demiç, Şerafettin; Açıkbaş, Yaşar; Çelebi, CemAmmonia (NH3) is a toxic substance resulting in various acute and chronic effects on individuals. NH3 detection, monitoring methods, and detection tools are desperately needed. In this work, we improved the NH3 sensing capabilities of grapheme (GP) films deposited by chemical vapor deposition (CVD) by modifying aromatic self-assembled monolayer (SAM) molecules such as 5-[(3-methylphenyl) (phenyl) amino] isophthalic acid (MeIPA) and 5-(diphenyl)amino] isophthalic acid (PhIPA) on amperometric detection method. Morphological investigations of the films were carried out by optical and scanning electron microscopy (SEM). Surface potential was characterized with Kelvin probe force microscopy (KPFM), and vibrational properties were characterized with Raman spectroscopy. MeIPA modification increased NH3 uptake by two times compared to unmodified GP. The results indicated that the SAM modification enhanced NH3 molecule adsorption and improved its periodic reversible and reproducible response using the amperometric detection system, indicating that SAM molecules might be a feasible probe for NH3. © 2001-2012 IEEE.Book Part Citation - WoS: 11Recent Progresses in Perovskite Solar Cells(Intech Europe, 2017) Demiç, Şerafettin; Özcivan, Ahmet Nuri; Can, Mustafa; Özbek, Cebrail; Karakaya, MervePerovskite solar cell (PSC) can be regarded as a continuation of dye sensitized solar cell (DSSC) in terms of the sensitization phenomena that occurred in the functioning molecules. In 2012, a breakthrough propose has been made for the sensitization of PSCs, in which a solid-state structure is offered as an equivalent sensitizer used in DSSC. The power conversion efficiency (PCE) of those solid-state cells reached about twofold of its initial value during the past several years. Immediately after, the researchers followed this propose worldwide. They have introduced an improved efficiency of as much as 20%, which was originally started from its initial value of 4%, just in 4 years. Thus, the new concept, solid perovskite molecules, has eliminated the need for the liquid electrolyte in DSSC while still carrying the advantages of organic solar cells (OSCs). Therefore, the distinctive material of PSC-the organometallic halide molecules (also known as OMH or organic-inorganic trihalides)-inclined an unexpected reputation for solar cell (SC) researches. Hence, it seems that we will witness a new age for solar conversion devices depending on the recent hopeful progresses on PSCs. The high rate of photovoltaic (PV) conversion capacity in PSC is generally expressed by the basic properties possessed by the organic-inorganic perovskite crystal, such as better optical properties and well diffused charges along huge distances during the charge transport. In addition, a low temperature processing is applicable during its production. Moreover, the perovskite layer provides a tunable band gap. Therefore, depending on better developments on designed molecules, PSC may gain extreme performances compared to the other competitors, such as OSC or DSSC devices. This chapter starts with a general discussion on the need for an affordable clean energy conversion device that is urgent for the future of humanity, due to publicly well-known global warming issue. In Section 2, basic properties of PSC are mentioned together with their structure and working principles. Section 3 continues with an overview on organometallic perovskite molecules after a brief introductory history is presented. The absorption and band gap properties are also discussed. Since most perovskite materials need a hole transporting material (HTMs) within the PSC, the kinds of HTMs that are designed for PSCs are described in Section 3. The rendering of long-term stabilization has special importance for PSCs since the instability issue remained idle in spite of those recent increased efficiency values attained by various research groups. Therefore, the stability issues are discussed in a separate part in Section 4. We finally close the chapter discussing the challenges and opportunities relying on the chapter content. We note that the recent investigations on PSCs have special importance for its large-scale realization in order to make them ready for the photovoltaic industry of the future. Hence, there are various announced meetings focusing on its mass production due to the unexpected sharp rise of the perovskite efficiency in the last 6 years. Hence, all the new cutting-edge scientific findings are also dealt with commercialization issues now, in order to attain the desired low cost fabrication, including the yield of high purity and the formation of smooth films during the continual manufacture of perovskite layers.Article Citation - WoS: 1Investigation of the Electrical Parameters of the Organic Diode Modified With 4-[(3 Benzoic Acid(Electrochemical Society, Inc., 2016) Havare, A. Kemal; Can, Mustafa; Yağmurcukardeş, Nesli; Yiğit, Mesude Zeliha; Aydın, Hasan; Okur, Salih; Demiç, Şerafettin; İçli, Sıddık4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) self-assembled monolayer (SAM) molecules as hole injection is formed on p and n type Si and on indium-tin oxide (ITO) electrodes to investigate the effect on the electrical parameters of hole only organic device. The hole mobility improvement of organic device was attributed to an intermediate energy level formed between hole transport materials (HTL) (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine -NPB) and ITO when forming an ultrathin MPPBA layer, leading to increase of carrier mobility of the device. Space charge limited current (SCLC) technique is used to estimate the mobility of the NPB formed at the interface metal/organic Ohmic contact. The hole mobility of ITO/NPB/Al and ITO/MPPBA/NPB/Al devices were obtained as 1.80 x 10(-6) and 1.76 x 10(-3) cm(2)/Vs, at 1350 E (V/cm)(1/2) applied electric field, respectively. SAM modified devices has lower barrier height values. The electronic characteristic parameters of the ITO/(with or without MPPBA)/NPB/Al, Au/n-Si(or p-Si)/(with or without MPPBA)/Au contacts were calculated using current-voltage (I-V) measurements by Schottky type carrier injection. (C) The Author(s) 2016. Published by ECS.Article Citation - WoS: 8Citation - Scopus: 10Experimental and Computational Investigation of Graphene/Sams Schottky Diodes(Elsevier Ltd., 2018) Aydın, Hasan; Bacaksız, Cihan; Yağmurcukardeş, Nesli; Karakaya, Caner; Mermer, Ömer; Can, Mustafa; Senger, Ramazan Tuğrul; Şahin, Hasan; Selamet, YusufWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.Article Citation - WoS: 4Citation - Scopus: 4Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance(Electrochemical Society, Inc., 2016) Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, YusufAu/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.Article Citation - WoS: 29Citation - Scopus: 31Electrical Properties of Sam-Modified Ito Surface Using Aromatic Small Molecules With Double Bond Carboxylic Acid Groups for Oled Applications(Elsevier Ltd., 2014) Can, Mustafa; Havare, Ali Kemal; Aydın, Hasan; Yağmurcukardeş, Nesli; Demir, Şerafettin; İçli, Sıddık; Okur, Salih5-[(3-Methylphenyl)(phenyl)amino]isophthalic acid (5-MePIFA) and 5-(diphenyl)amino]isophthalic acid (5-DPIFA) organic molecules were synthesized to form self-assembled monolayer on indium tin oxide (ITO) anode to enhance hole transport from ITO to organic hole transport layers such as TPD. The modified surface was characterized by scanning tunneling microscopy (STM). The change in the surface potential was measured by Kelvin probe force microscopy (KPFM). Our Kelvin probe force microscopy (KPFM) measurements showed that the surface potentials increased more than 100 mV with reference to bare indium tin-oxide. The results show that the threshold voltage on OLEDs with modified ITO is lowered significantly compared to OLEDs with unmodified ITO. The hole mobility of TPD has been estimated using space-charge-limited current measurements (SCLC).