Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Permanent URI for this collectionhttps://hdl.handle.net/11147/4719
Browse
6 results
Search Results
Article Citation - WoS: 25Citation - Scopus: 27Osteogenic Differentiation of Mesenchymal Stem Cells on Random and Aligned Pan/Ppy Nanofibrous Scaffolds(SAGE Publications, 2019) Selamet, Yusuf; İnce Yardımcı, Atike; Baskan, Öznur; Yılmaz, Selahattin; Meşe, Gülistan; Özçivici, EnginThe aim of this study was to develop random and aligned polyacrilonitrile (PAN)/polypyrrole (PPy) nanofibrous scaffolds by electrospinning technique for osteogenic differentiation of mesenchymal stem cells. Nanofibers were fabricated successfully as straight, smooth, and free from bead formation. The average diameter of random and aligned nanofibers was 268(+/- 49) nm and 225(+/- 72) nm, respectively. Alignment process increased the tensile strength of nanofibers 3.9-fold, while the tensile strain of nanofibers decreased by 78%. PAN/PPy nanofibers were hydrophilic with the contact angle value of about 32 degrees and alignment did not affect the contact angle value. Random and aligned PAN/PPy nanofibers were investigated as a scaffold material for osteogenic differentiation of D1 ORL UVA mouse bone marrow mesenchymal stem cells. Cells were able to attach and grow on nanofibers confirmed by cell viability results. Stem cells that were cultured with osteogenic induction were able to mineralize on electrospun nanofibers based on alizarin red and Von Kossa dye staining. For aligned PPy nanofibers, mineralization occurred in the fiber alignment direction. Consequently, PAN/PPy nanofibrous mats in both random and aligned forms would be potential candidates for bone tissue engineering.Other Erratum To: Mbe-Grown Cdte Layers on Gaas With In-Assisted Thermal Deoxidation(Springer Verlag, 2016) Arı, Ozan; Bilgilisoy, Elif; Özçeri, Elif; Selamet, YusufArticle Citation - WoS: 6Citation - Scopus: 5Mbe-Grown Cdte Layers on Gaas With In-Assisted Thermal Deoxidation(Springer Verlag, 2016) Arı, Ozan; Bilgilisoy, Elif; Özçeri, Elif; Selamet, YusufMolecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm−2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.Article Citation - WoS: 4Citation - Scopus: 4Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance(Electrochemical Society, Inc., 2016) Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, YusufAu/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.Article Citation - WoS: 6Citation - Scopus: 6Influence of Buffer Layers on Ni Thin Film Structure and Graphene Growth by Cvd(IOP Publishing Ltd., 2015) Özçeri, Elif; Selamet, YusufBuffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the dewetting effect and surface roughness of Ni catalyst film. Thin adhesive (Cr) layers with or without Al2O3 buffer layers increased the texturing in (1 1 1) orientation, which was promoted by growing at an elevated temperature (450 °C). The effects of pretreatment and growth temperature on crystal orientation, grain size and surface roughness of Ni film were analyzed. Our results indicated a large positive correlation coefficient between the film thickness and surface roughness for thinner and non-buffered films, and a negative correlation coefficient between the thickness and 900 °C -annealed film roughness for thicker and buffered films. The graphene coverage was greatly improved over the films grown with Al2O3 and/or Cr layers. In summary, we suggest that growing high quality, large area, 1- or 2-layer graphene on polycrystalline Ni transition metal thin film is optimized by using Al2O3 and/or Cr layers to reduce Ni dewetting, surface roughness, and groove depth while controlling grain size and texturing in (1 1 1) orientation by annealing at 900 °C.Article Citation - WoS: 28Citation - Scopus: 31The Effects of Catalyst Pretreatment, Growth Atmosphere and Temperature on Carbon Nanotube Synthesis Using Co-mo/Mgo Catalyst(Elsevier Ltd., 2015) İnce Yardımcı, Atike; Yılmaz, Selahattin; Selamet, YusufThe growth of high quality and high yield carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CVD) of CH4 over Co-Mo/MgO catalyst was investigated for different growth temperatures and H2 flow rates. It was observed that CNT yield decreased with the H2 flow rate, however, quality increased with increasing H2 flow rate. CNT yield increased for the temperatures 850-950 °C but dropped significantly above 950 °C. In this study, the highest yield of 1526% was obtained at the growth temperature of 950 °C. The optimum H2 flow rate was 200 sccm; this rate gave both high graphitization and high yield of product. Various CNT growth atmospheres including Ar, H2 and the mixture of both gases were also analyzed and it was observed that the highest quality CNTs were obtained for both pretreatment and growth carried out with H2. This gave a high yield of 292%. On the other hand, CNT growth carried out under Ar atmosphere gave higher CNT yield of 368%, however, the CNTs grown with Ar were more defective and had larger diameters. Prime novelty statement We demonstrate a sorbitol added catalysis synthesis method and importance of the ideal growth conditions to improve high quality single walled carbon nanotube yield up to 1500%.