Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği

Permanent URI for this collectionhttps://hdl.handle.net/11147/4719

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  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Tuning Thermal Transport in Graphene Via Combinations of Molecular Antiresonances
    (Elsevier Ltd., 2018) Sevim, Koray; Sevinçli, Haldun; Sevim, Koray; Sevinçli, Haldun; 03.09. Department of Materials Science and Engineering; 04.05. Department of Pyhsics; 03. Faculty of Engineering; 04. Faculty of Science; 01. Izmir Institute of Technology
    We propose a method to engineer the phonon thermal transport properties of low dimensional systems. The method relies on introducing a predetermined combination of molecular adsorbates, which give rise to antiresonances at frequencies specific to the molecular species. Despite their dissimilar transmission spectra, thermal resistances due to individual molecules remain almost the same for all species. On the other hand, thermal resistance due to combinations of different species are not additive and show large differences depending on the species. Using a toy model, the physics underlying the violation of resistance summation rule is investigated. It is demonstrated that equivalent resistance of two scatterers having the same resistances can be close to the sum of the constituents or ∼ 70% of it depending on the relative positions of the antiresonances. The relative positions of the antiresonances determine the net change in transmission, therefore the equivalent resistance. Since the entire spectrum is involved in phonon spectrum changes in different parts of the spectrum become important. Performing extensive first-principles based computations, we show that these distinctive attributes of phonon transport can be useful to tailor the thermal transport through low dimensional materials, especially for thermoelectric and thermal management applications.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 10
    Experimental and Computational Investigation of Graphene/Sams Schottky Diodes
    (Elsevier Ltd., 2018) Aydın, Hasan; Bacaksız, Cihan; Senger, Ramazan Tuğrul; Karakaya, Caner; Mermer, Ömer; Selamet, Yusuf; Senger, Ramazan Tuğrul; Şahin, Hasan; Şahin, Hasan; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.
  • Article
    Citation - WoS: 28
    Citation - Scopus: 31
    The Effects of Catalyst Pretreatment, Growth Atmosphere and Temperature on Carbon Nanotube Synthesis Using Co-mo/Mgo Catalyst
    (Elsevier Ltd., 2015) İnce Yardımcı, Atike; Yılmaz, Selahattin; Selamet, Yusuf; Yılmaz, Selahattin; 03.02. Department of Chemical Engineering; 04.05. Department of Pyhsics; 03. Faculty of Engineering; 04. Faculty of Science; 01. Izmir Institute of Technology
    The growth of high quality and high yield carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CVD) of CH4 over Co-Mo/MgO catalyst was investigated for different growth temperatures and H2 flow rates. It was observed that CNT yield decreased with the H2 flow rate, however, quality increased with increasing H2 flow rate. CNT yield increased for the temperatures 850-950 °C but dropped significantly above 950 °C. In this study, the highest yield of 1526% was obtained at the growth temperature of 950 °C. The optimum H2 flow rate was 200 sccm; this rate gave both high graphitization and high yield of product. Various CNT growth atmospheres including Ar, H2 and the mixture of both gases were also analyzed and it was observed that the highest quality CNTs were obtained for both pretreatment and growth carried out with H2. This gave a high yield of 292%. On the other hand, CNT growth carried out under Ar atmosphere gave higher CNT yield of 368%, however, the CNTs grown with Ar were more defective and had larger diameters. Prime novelty statement We demonstrate a sorbitol added catalysis synthesis method and importance of the ideal growth conditions to improve high quality single walled carbon nanotube yield up to 1500%.