Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği

Permanent URI for this collectionhttps://hdl.handle.net/11147/4719

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Department: search.filters.department.İzmir Institute of Technology. PhysicsPublisher: search.filters.publisher.Springer

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 8
    Development of Zto/Ag Transparent Electrodes for Thin Film Solar Cells
    (Springer, 2022) Türkoğlu, Fulya; Köseoğlu, Hasan; Özyüzer, Lütfi; Cantaş, Ayten; Özdemir, Mehtap; Aygün, Gülnur; Özdemir, Mehtap; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    This article presents the optimization of Zinc Tin Oxide/Silver/Zinc Tin Oxide (ZTO/Ag/ZTO) multilayers to implement them in thin film solar cells as transparent electrodes. To achieve improvements on the performance of these transparent multilayers, effect of Ag and ZTO thicknesses, and position of Ag layer within the multilayer were investigated. Electrical and optical characterization of these multilayers revealed that reduced sheet resistance and improved optical transmittance can be acquired for solar cells by the optimization of thin film thicknesses and position of the Ag within the multilayer. The improvement of the electrical and optical behavior of the ZTO/Ag/ZTO structures enabled figure of merit (FoM) values up to 69.69 × 10–3 Ω−1. The performance of our multilayer electrodes was also compared with ITO and AZO electrodes. The obtained results suggest that fabricated multilayer electrodes can be a good choice for thin film solar cells.
  • Article
    Citation - WoS: 9
    Citation - Scopus: 7
    Epitaxial Characteristics of Mbe-Grown Znte Thin Films on Gaas (211)b Substrates
    (Springer, 2019) Özçeri, Elif; Tarhan, Enver; Tarhan, Enver; Tarhan, Enver; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 mu m thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 x 10(7) cm(-2) was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.