Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Permanent URI for this collectionhttps://hdl.handle.net/11147/4719
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Conference Object Reversible Energy Transfer Between a Single Defect in Hbn and Graphene(OSA - The Optical Society, 2019) Özçeri, Elif; Arı, Ozan; Balcı, Sinan; Kocabaş, Coşkun; Ateş, SerkanWe present a reversible energy transfer between a single defect in hBN and graphene. Dynamic control of Fermi level of graphene results in switching on and off single photon emission from a single quantum emitter. © OSA 2019 © 2019 The Author(s)Article Citation - WoS: 3Citation - Scopus: 3Growth and Characterization of Cdte Absorbers on Gaas by Mbe for High Concentration Pv Solar Cells(John Wiley and Sons Inc., 2015) Arı, Ozan; Polat, Mustafa; Karakaya, Merve; Selamet, YusufCdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm-1 in solar radiation spectrum.