Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği

Permanent URI for this collectionhttps://hdl.handle.net/11147/4719

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Subject: search.filters.subject.GrapheneWoS Q: search.filters.wosQuartile.Q3

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 10
    Microstructures and Mechanical Properties of Graphene Platelets-Reinforced Spark Plasma Sintered Tantalum Diboride-Silicon Carbide Composites
    (IOP Publishing, 2019) Gürcan, Kübra; İnci, Ezgi; Saçkan, İbrahim; Ayaş, Erhan; Gasan, Hakan
    Graphene nanoplates reinforcement (GNPs) TaB2-SiC composites were fabricated with Spark Plazma sintering (SPS) at 1850 degrees C with a-uniaxial pressure of 50 MPa and 10 min dwell time. Systematic investigation on the effect of GNP amount of densification, microstructural and mechanical properties (microhardness and fracture toughness) of the composites were presented. Density and hardness of composites decreased with the addition of GNP, while similar to 35% increase of fracture toughness value was obtained with GNP addition. The microstructural evaluation indicated that overlapped and agglomerated GNPs increased with an increasing amount of GNP in the composites and caused to decrease of density and hardness. On the other hand, GNP was retained in the composite form even with high process temperature (1850 degrees C) and cause toughening of composites with changing the fracture mode from transgranular to transgranular/intergranular fracture. GNP pull out, crack branching, crack bridging and crack deflection were observed as main toughening mechanisms.
  • Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance
    (Electrochemical Society, Inc., 2016) Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, Yusuf
    Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.