Phd Degree / Doktora

Permanent URI for this collectionhttps://hdl.handle.net/11147/2869

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Author: search.filters.author.Çelebi, CemSubject: search.filters.subject.Graphene

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  • Doctoral Thesis
    Two Dimensional Material Based Field Effect Transistor for Biosensing Applications
    (01. Izmir Institute of Technology, 2023) İnanç, Dilce; Yıldız, Ümit Hakan; Çelebi, Cem
    This thesis presents research on the use of two-dimensional material graphene as an area-effective transistor and its application in biological fields. The formation of wrinkled and flat structures on the surface of a single-layer graphene area-effective transistor, epitaxially grown for determining the bio-membrane dynamics of graphene, was examined using two different methods of deposition (thermal evaporation and pulsed electron accumulation) of a silicon dioxide (SiO2) layer. The investigation aimed to evaluate the pH and lipid bilayer formation performance of both wrinkled and flat GFETs. Increased sensitivity was determined through electrical measurements, as the oxide layer becomes thinner due to the existence of wrinkles, thus providing electrostatic coating on graphene. A sensor platform of chemiresistor type was developed for the differential determination of volatile organic compounds (VOCs) by synthesizing single-layer, bilayer, and multilayer graphene, enabling the analysis of ethanol (EtOH) and methanol (MetOH). Sensors produced using three different graphene morphologies demonstrated differential MeOH-EtOH responses attributed to the differential intercalation phenomenon in multilayer graphene morphologies when compared to ethanol. For the detection of VOCs such as acetone, ethanol, and hexane in human breath, a polymer nanofiber/multi-walled carbon nanotube or poly (3,4-ethylenedioxythiophene)/gold (Au) and iron oxide (Fe) hybrid bioelectronic interface was developed. Sensitivity studies were conducted by applying pure VOCs at different concentrations to the sensor platforms, and the behavior of the sensor platforms against interfering elements was evaluated by recharacterizing them under CO2 and humidity conditions. Considering the responses of MWCNT-PLLCL-Fe-based sensors to acetone, ethanol, and hexane, the tendency of water molecules to adhere to the Fe surface was shown to decrease water condensation on the conductive layer compared to other sensor configurations, indicating that the humidity effect was minimized in MWCNT-PLLCL-Fe-based sensors.
  • Doctoral Thesis
    Performance Enhancement of Graphene/Silicon Based Near-Infrared Schottky Photodiodes
    (Izmir Institute of Technology, 2022) Fidan, Mehmet; Çelebi, Cem
    This thesis presents an experimental investigation on the performance enhancement of graphene/silicon based near-infrared Schottky photodiodes. The photodiode devices were fabricated by transferring CVD graphene layers onto n-type silicon (n-Si) substrates. The samples exhibited strong Schottky diode character and had high spectral sensitivity at 905 nm peak wavelength. The Schottky contact characteristics of the samples (e.g., barrier height, ideality factor and sheet resistance) were determined by analyzing the current-voltage measurement data. All the samples demonstrated a clear photovoltaic activity under light illumination. The Schottky barrier height (SBH) in Gr/n-Si photodiodes was tuned as a function of light power density. Light power density driven modification of the SBH was correlated with the variation in the measured open-circuit voltage. The impact of junction area and number of graphene layers on the spectral responsivity and response speed of Gr/n-Si based Schottky photodiodes were also investigated. Firstly, three batches of Gr/n-Si photodiode samples with junction area of 4 mm2, 12 mm2 and 20 mm2 were produced by transferring monolayer CVD graphene on individual n-Si substrates. The sample with 20 mm2 junction area reached a spectral response of 0.76 AW-1, which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples was found to be lowered as a function of the junction area. After that, we increased the number of graphene layers on n-Si. Wavelength-resolved and time-dependent photocurrent measurements demonstrated that both spectral responsivity and response speed are enhanced as the number of graphene layers is increased from 1 to 3 on n-Si substrates. This thesis showed that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of graphene electrode and/or as well as the number of graphene layers on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface.
  • Doctoral Thesis
    Developing Graphene-Organic Hybrid Electrodes for Silicon Based Schottky Devices
    (Izmir Institute of Technology, 2018) Aydın, Hasan; Çelebi, Cem; Varlıklı, Canan
    This thesis focused on developing graphene-organic hybrid electrodes for silicon based Schottky devices. Two different sets of carboxylic acid based SAMs were used to improve the rectification character of the Schottky junction formed at graphene/Si interface. While the first set of SAMs consists of MePIFA and DPIFA, the second set of SAMs contains TPA and CAR. In addition to this, P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was utilized to form P3HT-graphene bilayer electrode. Current-voltage characteristics of bare and SAMs modified devices showed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. The DPIFA SAMs device exhibited better diode performance compare to MePIFA SAMs due to the absence of methyl group which hinders π-π interaction between SAMs molecule and graphene. Furthermore, the CAR-based device indicates better diode characteristic with respect to the TPA-based device due to smaller energy differences between graphene and CAR. The effect of P3HT-graphene bilayer electrode on the photoresponsivity characteristics of Silicon based Schottky photodetectors have been also investigated. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent measurements exhibited excellent durability and fast response speed. Moreover, the maximum photoresponsivity of P3HT-graphene/Si photodetector increased compared to that of bare graphene/Si photodetector. The observed increment in the photoresponsivity of P3HT-graphene/Si devices was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Finally, P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors.
  • Doctoral Thesis
    Functionalized Cvd Grown Graphene for Gas Sensing Applications
    (Izmir Institute of Technology, 2017) Yağmurcukardeş, Nesli; Çelebi, Cem; Çelebi, Cem; Ünverdi, Özhan
    Graphene is a two dimensional one-atom thick sheet of sp2 bonded carbon atoms arranged in a honeycomb lattice structure. It has high electron mobility and it is the material with the lowest resistivity at room temperature. By changing the edge properties with chemical modification, few-layer graphene may gain new magnetic properties. Besides having unusual electronic properties, single-layer graphene has important gas sensing capability. With the adsorption of the gas molecules, the local carrier concentration of graphene is modified and its resistance is altered. The high mobility, large area ohmic contact and metallic conductivity of graphene help to reduce the background noise and thus make it highly sensitive device even small molecular changes at atomic ranges. In this dissertation, Chemical Vapor Deposition (CVD) grown graphene layers were functionalized by self-assembled monolayers (SAMs) and etched anisotropically by H2 for the first time to improve sensor characteristics for toxic gas sensing. CO, CO2, NH3 gases were used as target molecules. Characterization techniques such as Optical Microscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Kelvin Probe Force Microscopy (KPFM), Raman Spectroscopy, Quartz Crystal Microbalance (QCM) and amperometric measurements were used for the investigation of the metal thin film, graphene layers and gas adsorbed film structures. Results indicate that the SAM modification enhanced CO and NH3 absorbing capability of graphene films and also improved their periodic reversible response characteristics. The resistivity results are consistent with frequency change results. Humidity sensitivity of sensors are also decreased significantly due to the applied etching process.