GCRIS

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Single-Photon Generation From Defects and Manipulation With Nanostructures
(Izmir Institute of Technology, 2019) Özçeri İyikanat, Elif; Aygün, Gülnur; Tarhan, Enver; Tarhan, Enver; Aygün Özyüzer, Gülnur
Single-photon sources are essential components for several applications in the field of quantum information technologies, such as quantum cryptology and quantum computation. To this aim, efficient generation and detection of single-photons are the crucial to be achieved. Among single-photon sources that are extensively studied in the literature, defect centers in solid are very promising due to their room temperature operation and their stability. The aim of this thesis is to generate single photons at room temperature and control their optical properties by nanostructures. Single-photon emission from TMDCs originates from localized weakly bound excitons at cryogenic temperatures due to their small exciton binding energies. However, room temperature SP emission from WS2 can be obtained by creatingWO3 defects. In our study, room temperature emission from defects in WO3 was investigated. Density functional theory calculations showed that the source of the emission can be oxygen defects. Additionally, the emission was brightened by plasmonic gold nanoparticles. Furthermore, defects in two-dimensional (2D) hexagonal boron nitride (hBN) is offered as an efficient room temperature SPS. HBN is a wide bandgap 2D material, in which defect centers create discrete energy level to generate single photons. In our study, reversible single-photon emission control from defects in hBN was demonstrated by Förster-like resonance energy transfer between the single-photon emitter and a graphene layer. To this aim an ionic liquid based device structure was used.
Developing Graphene-Organic Hybrid Electrodes for Silicon Based Schottky Devices
(Izmir Institute of Technology, 2018) Aydın, Hasan; Çelebi, Cem; Varlıklı, Canan
This thesis focused on developing graphene-organic hybrid electrodes for silicon based Schottky devices. Two different sets of carboxylic acid based SAMs were used to improve the rectification character of the Schottky junction formed at graphene/Si interface. While the first set of SAMs consists of MePIFA and DPIFA, the second set of SAMs contains TPA and CAR. In addition to this, P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was utilized to form P3HT-graphene bilayer electrode. Current-voltage characteristics of bare and SAMs modified devices showed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. The DPIFA SAMs device exhibited better diode performance compare to MePIFA SAMs due to the absence of methyl group which hinders π-π interaction between SAMs molecule and graphene. Furthermore, the CAR-based device indicates better diode characteristic with respect to the TPA-based device due to smaller energy differences between graphene and CAR. The effect of P3HT-graphene bilayer electrode on the photoresponsivity characteristics of Silicon based Schottky photodetectors have been also investigated. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent measurements exhibited excellent durability and fast response speed. Moreover, the maximum photoresponsivity of P3HT-graphene/Si photodetector increased compared to that of bare graphene/Si photodetector. The observed increment in the photoresponsivity of P3HT-graphene/Si devices was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Finally, P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors.
Functionalized Cvd Grown Graphene for Gas Sensing Applications
(Izmir Institute of Technology, 2017) Yağmurcukardeş, Nesli; Çelebi, Cem; Çelebi, Cem; Ünverdi, Özhan
Graphene is a two dimensional one-atom thick sheet of sp2 bonded carbon atoms arranged in a honeycomb lattice structure. It has high electron mobility and it is the material with the lowest resistivity at room temperature. By changing the edge properties with chemical modification, few-layer graphene may gain new magnetic properties. Besides having unusual electronic properties, single-layer graphene has important gas sensing capability. With the adsorption of the gas molecules, the local carrier concentration of graphene is modified and its resistance is altered. The high mobility, large area ohmic contact and metallic conductivity of graphene help to reduce the background noise and thus make it highly sensitive device even small molecular changes at atomic ranges. In this dissertation, Chemical Vapor Deposition (CVD) grown graphene layers were functionalized by self-assembled monolayers (SAMs) and etched anisotropically by H2 for the first time to improve sensor characteristics for toxic gas sensing. CO, CO2, NH3 gases were used as target molecules. Characterization techniques such as Optical Microscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Kelvin Probe Force Microscopy (KPFM), Raman Spectroscopy, Quartz Crystal Microbalance (QCM) and amperometric measurements were used for the investigation of the metal thin film, graphene layers and gas adsorbed film structures. Results indicate that the SAM modification enhanced CO and NH3 absorbing capability of graphene films and also improved their periodic reversible response characteristics. The resistivity results are consistent with frequency change results. Humidity sensitivity of sensors are also decreased significantly due to the applied etching process.

Phd Degree / Doktora

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