GCRIS

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Fabrication and Characterization of Soi Based Photodetectors With Graphene Electrode
(01. Izmir Institute of Technology, 2023) Yanılmaz, Alper; Çelebi, Cem; Balcı, Sinan
This thesis presents the pioneering methods for the design, fabrication process, and performance evaluation of graphene (G) and n-type silicon (n-Si) based self-powered one dimensional (1D) and two dimensional (2D) photodetector arrays (PDAs) on a silicon on insulator (SOI) substrate. In the device structure, monolayer G is utilized as hole collecting transparent conductive electrode (TCE) and n-Si is used as light absorbing material, respectively. After analyzing the photo-response characteristics of single pixel G/n-Si diode on SOI, we fabricated G/n-Si based Schottky barrier 1D PDAs with common G electrode, separate G electrode and 2D PDA with individual G electrodes on linearly arrayed n-Si channels, respectively. Each G/n-Si diodes exhibited a clear rectifying Schottky character with low dark current and diode parameters were analyzed using the current-voltage measurement. Besides, all diodes demonstrated a clear photovoltaic activity under the light illumination and maximum responsivity at 660 nm peak wavelength. Each diode in PDA revealed similar device performances under self-powered mode in terms of an Ilight/Idark ratio up to 104, a responsivity of ~0.1 A/W and a response speed of ~1.3 μs at 660 nm wavelength. The optical crosstalk was extremely low between neighboring diodes and also it could be greatly minimized when G is used as separated electrode on arrayed Si up to ~0.10% (-60 dB) per array. Time dependent photocurrent spectroscopy measurements revealed an excellent photocurrent reversibility of both device types. In the diode structure, the homogeneity of the graphene film transferred on n-Si were examined by Raman mapping and correlated with the sensitivity of diode to incoming light. This thesis paves the way for the new generation of optoelectronic devices with various potential by integrating G and SOI technology to PDA devices with ease of fabrication.
Performance Enhancement of Graphene/Silicon Based Near-Infrared Schottky Photodiodes
(Izmir Institute of Technology, 2022) Fidan, Mehmet; Çelebi, Cem
This thesis presents an experimental investigation on the performance enhancement of graphene/silicon based near-infrared Schottky photodiodes. The photodiode devices were fabricated by transferring CVD graphene layers onto n-type silicon (n-Si) substrates. The samples exhibited strong Schottky diode character and had high spectral sensitivity at 905 nm peak wavelength. The Schottky contact characteristics of the samples (e.g., barrier height, ideality factor and sheet resistance) were determined by analyzing the current-voltage measurement data. All the samples demonstrated a clear photovoltaic activity under light illumination. The Schottky barrier height (SBH) in Gr/n-Si photodiodes was tuned as a function of light power density. Light power density driven modification of the SBH was correlated with the variation in the measured open-circuit voltage. The impact of junction area and number of graphene layers on the spectral responsivity and response speed of Gr/n-Si based Schottky photodiodes were also investigated. Firstly, three batches of Gr/n-Si photodiode samples with junction area of 4 mm2, 12 mm2 and 20 mm2 were produced by transferring monolayer CVD graphene on individual n-Si substrates. The sample with 20 mm2 junction area reached a spectral response of 0.76 AW-1, which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples was found to be lowered as a function of the junction area. After that, we increased the number of graphene layers on n-Si. Wavelength-resolved and time-dependent photocurrent measurements demonstrated that both spectral responsivity and response speed are enhanced as the number of graphene layers is increased from 1 to 3 on n-Si substrates. This thesis showed that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of graphene electrode and/or as well as the number of graphene layers on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface.

Phd Degree / Doktora

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