Sürdürülebilir Yeşil Kampüs Koleksiyonu / Sustainable Green Campus Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7755
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Article Citation - WoS: 28Citation - Scopus: 30Hydrochemical and Isotopic Composition of Tuzla Geothermal Field (canakkale-Turkey) and Its Environmental Impacts(Taylor and Francis Ltd., 2009) Baba, Alper; Yüce, Galip; Deniz, Ozan; Yasin, DidemTuzla is an active geothermal area located in northwestern Turkey, 80 km south of the city of Canakkale and 5 km from the Aegean Coast. Geothermal brine, deriving from this area, contains an abundance of NaCl and a water temperature of 173°C (T1 well at 814 m depth) is typically encountered. The aim of this study was to determine the hydrogeochemical properties of the geothermal brine using both chemical and isotopic data, and to investigate the origin of the geothermal brine in the Tuzla area and the environmental impacts of Tuzla Geothermal Field (TGF). Both geothermal brine and shallow groundwater in the area are of meteoric origin. Isotope results indicate that the hot saline waters (brine) in the Tuzla geothermal field originate from connate water along faults. As the saline water rises to the surface, it mixes with shallow groundwaters in various ratios. In addition, the high sodium (Na) and chloride (Cl) content in the Tuzla Stream, fed from the Tuzla geothermal brine during the dry season, cause an increase in sodium and chloride concentrations in the shallow groundwaters by infiltration into the aquifer. Moreover, salt accumulation on the surface is observed due to the uncontrolled artesian flow of geothermal brine, which adversely affects the salinity of shallow groundwater.Article Citation - WoS: 2Citation - Scopus: 4Genotyping of Various Arcobacter Species Isolated From Domestic Geese by Randomly Amplified Polymorphic Dna (rapd) Analysis(M. & H. Schaper, 2008) Atabay, Halil İbrahim; Ünver, Ahmet; Otlu, Salih; Kalaycıoğlu, Atila TanerThe present study was undertaken to genotype Arcobacter (A.) butzleri, A. cryaerophilus and A. skirrowii isolates from domestic geese from three different flocks in Turkey. Fifteen Arcobacter isolates were analysed to determine the RAPD profiles based on the amplified DNA fragment patterns using a universal primer for genotyping. 7 A. cryaerophilus, 2 A. butzleri and 6 A. skirrowii isolates produced 6, 2 and 3 distinct profiles, respectively. The isolates of the same patterns originated from the same flocks. The findings of the present study may support previous reports of the existence of a large degree of heterogeneity among Arcobacter isolates. Observation of such levels of genetic diversity may suggest that there are multiple contamination sources in the environment and/or the determined genotypes may have undergone genetic rearrangements. This first report of genotyping of various Arcobacter species isolated from healthy geese is expected to improve the understanding of the ecology and epidemiology of this emerging pathogen.Conference Object Citation - WoS: 16Citation - Scopus: 17Instability Phenomena in Microcrystalline Silicon Films(National Institute of Optoelectronics, 2005) Finger, Friedhelm; Carius, Reinhard; Dylla, Thorsten; Klein, Stefan; Okur, Salih; Güneş, MehmetMicrocrystalline silicon (μc-Si:H) for solar cell applications is investigated with respect to the material stability upon treatment of the material in various environments, followed by annealing. The material can be separated into two groups: (i) material with high crystalline volume fractions and pronounced porosity which is susceptible to in-diffusion of atmospheric gases, which, through adsorption or oxidation affect the electronic properties and (ii) compact material with high or low crystalline volume fractions which show considerably less or no influence of treatment in atmospheric gases. We report the investigation of such effects on the stability of μc-Si:H films prepared by plasma enhanced chemical vapour deposition and hot wire chemical vapour deposition.Conference Object Citation - WoS: 7Citation - Scopus: 8Properties of Reactive O2 Ion Beam Sputtered Tio2 on Si Wafers(National Institute of Optoelectronics, 2005) Ulucan, Savaş; Özyüzer, Gülnur Aygün; Özyüzer, Lütfi; Eğilmez, Mehmet; Turan, RaşitTiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed.