Sürdürülebilir Yeşil Kampüs Koleksiyonu / Sustainable Green Campus Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7755
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Conference Object Citation - WoS: 17Citation - Scopus: 21Place Management of a Creative City: the Case of Izmir(Inderscience Enterprises Ltd., 2017) Mengi, Onur; Durmaz Drinkwater, Sıdıka Bahar; Öner, Aslı Ceylan; Velibeyoğlu, KorayThis study investigates how place management is used to render a creative city through the combination of soft factors as intangible characteristics and hard factors as tangible characteristics of the built environment. The study focuses on Izmir, Turkey; exploring its potential as an emerging creative city. The methodology is a descriptive analysis of recent urban design and planning activities of creative cities, reviews projects and strategies in Izmir. Findings provide a framework for place management tools and their strategic use for integration of art, design, creativity and knowledge in creative cities. Place management is used as a tool for image building and identity enhancement, and for quality of place to attract creative and knowledge workers. In the case of Izmir, hard factors triggered the formation process whereas soft factors have taken strengthen the initiative. However, both of them are yet not strong enough to creative public awareness and critical mass.Article Citation - WoS: 4Citation - Scopus: 4Selection of Alternative Landfill Location by Using a Geographical Information System. European Side of Istanbul. Case Study(Technical University of Wroclaw, 2016) Demir, Göksel; Kolay, Umut E.; Ökten, Hatice Eser; Alyüz, Ümmügülsüm; Bayat, CumaOne of the most difficult tasks encountered when implementing waste management practices in Turkey involves the selection of the most suitable area for a landfill. The Geographic Information System (GIS) which possesses the ability to imitate and process economic and environmental constraints, presents itself as a useful and effective decision support tool. This study will utilize the GIS to determine feasible alternative landfill areas on the European side of Istanbul, which has a high density population, showing that accurate selection results can be achieved at lower cost.Conference Object Citation - WoS: 16Citation - Scopus: 17Instability Phenomena in Microcrystalline Silicon Films(National Institute of Optoelectronics, 2005) Finger, Friedhelm; Carius, Reinhard; Dylla, Thorsten; Klein, Stefan; Okur, Salih; Güneş, MehmetMicrocrystalline silicon (μc-Si:H) for solar cell applications is investigated with respect to the material stability upon treatment of the material in various environments, followed by annealing. The material can be separated into two groups: (i) material with high crystalline volume fractions and pronounced porosity which is susceptible to in-diffusion of atmospheric gases, which, through adsorption or oxidation affect the electronic properties and (ii) compact material with high or low crystalline volume fractions which show considerably less or no influence of treatment in atmospheric gases. We report the investigation of such effects on the stability of μc-Si:H films prepared by plasma enhanced chemical vapour deposition and hot wire chemical vapour deposition.Conference Object Citation - WoS: 7Citation - Scopus: 8Properties of Reactive O2 Ion Beam Sputtered Tio2 on Si Wafers(National Institute of Optoelectronics, 2005) Ulucan, Savaş; Özyüzer, Gülnur Aygün; Özyüzer, Lütfi; Eğilmez, Mehmet; Turan, RaşitTiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed.