Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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Access Right: Closed AccessAuthor: search.filters.author.Emrullahoğlu, Mustafa

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Now showing 1 - 3 of 3
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    A New Fluorescent 'turn On' Probe for Rapid Detection of Biothiols
    (Taylor and Francis Ltd., 2020) Üçüncü, Muhammed; Zeybek, Hüseyin; Karakuş, Erman; Üçüncü, Canan; Emrullahoğlu, Mustafa
    We designed and synthesised a novel molecular probe exhibiting high selectivity and sensitivity towards reactive sulphur species (RSS) over other amino acids and biologically relevant species, as well as scrutinised its spectroscopic behaviours under physiological conditions and in living milieu. We used an electrophilic cyanate group as a masking agent to block the excited state intramolecular proton transfer process of 2-(2-cyanato-3-methoxyphenyl)benzo[d]thiazole (HMBT-OCN), which readily hydrolyses to the highly fluorescent structure, 2-(2'-Hydroxy-3'-methoxyphenyl) benzothiazole (HMBT-OH), in the presence of reactive sulphur species. [GRAPHICS] .
  • Article
    Citation - WoS: 14
    Citation - Scopus: 14
    Analysis of Illumination Dependent Electrical Characteristics of Α- Styryl Substituted Bodipy Dye-Based Hybrid Heterojunction
    (Springer, 2021) Kaplan, Nazmiye; Taşcı, Enis; Emrullahoğlu, Mustafa; Gökçe, Halil; Tuğluoğlu, Nihat; Eymur, Serkan
    The alpha-styryl substituted BODIPY compound (BDP-Sty) was synthesized and characterized. The optimize ground state structure, HOMO and LUMO simulations, MEP surface map, and various molecular descriptors of the isolated BDP-Sty compound were investigated by Density Functional Theory at the B3LYP/6-311G (d,p) level. The reverse and forward bias current-voltage (I-V) characteristics of the Au/BDP-Sty/n-Si/In diode showed Schottky diode-like characteristics. An ideality factor (n) and barrier height (phi(b)) values of prepared diode for dark were found as 2.32 and 0.828, respectively. The series resistance (R-s) values were attained from the dV/dln(I) plot and Cheung's H(I) function and their values found for dark as 4.95 k omega and 4.59 k omega, respectively. The lnI - lnV and ln(I-R) - V-R(1/2) characteristics of the Au/BDP-Sty/n-Si/In diode reveal that the conduction mechanism is ohmic at low voltage and that of trap-filled space charge limited current and space charge limited current at higher voltage. The characteristic photodiode parameters of the prepared diode such as open circuit voltage (V-oc), short circuit current density (J(sc)), and photosensitivity (S) have also been investigated. All these results indicate the applicability for Au/BDP-Sty/n-Si/In diode in the field optoelectronic device applications.
  • Article
    Citation - WoS: 11
    Citation - Scopus: 13
    Electrical, Photodiode, and Dft Studies of Newly Synthesized Pi-Conjugated Bodipy Dye-Based Au/Bod-dim Device
    (Elsevier, 2021) Şahin, Muhammet Ferit; Taşcı, Enis; Emrullahoğlu, Mustafa; Gökçe, Halil; Tuğluoğlu, Nihat; Eymur, Serkan
    A pi-conjugated 4,4-difluoro-4- bora-3a,4a-diaza-s-indacene (BODIPY) dimer (BOD-Dim) compound has been synthesized and characterized. The optimized molecular structure, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) simulations, and static isotropic polarizability of the isolated compound were computed via the Gaussian program. The simulated static dielectric constant value was calculated. The effect of the BOD-Dim interlayer on the diode characteristics of the Au/n-Si diode was investigated. The electrical and photovoltaic parameters of the Au/BOD-Dim/n-Si/In diode such as ideality factor (n), barrier height (phi B), open-circuit voltage (Voc), short-circuit current (Jsc), photosensitivity (S), and photoresponsivity (R) have been investigated by current-voltage measurements at dark and under various illumination intensities. The possible current conduction mechanism has been examined through the forward bias ln (IF)-ln(VF) and ln(IR)-VR1/2 characteristics. All obtained results confirmed that Au/BOD-Dim/n-Si/In diode exhibits a photovoltaic behavior and presents great potential as a photosensor for optoelectronic device applications.