Photonics / Fotonik
Permanent URI for this collectionhttps://hdl.handle.net/11147/2590
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Article Citation - WoS: 3Citation - Scopus: 4A Facile Method for Boosting the Graphitic Carbon Nitride's Photocatalytic Activity Based on 0d/2d S-Scheme Heterojunction Nanocomposite Architecture(Elsevier, 2024) Kahraman, Zeynep; Kartal, Uğur; Gent, Aziz; Alp, EmreGraphitic carbon nitride (g-C 3 N 4 ) has received significant interest as a metal -free photocatalyst. The S -scheme photocatalytic system has great potential to improve the charge separation in semiconductor photocatalysts. In this study, we have fabricated non-toxic and low-cost photocatalytic nanocomposites of 0D/2D S -scheme heterojunction composed of iron oxide and graphitic carbon nitride by a facile method. The developed facile method provides a sustainable way with a high atom economy to further enhance the photocatalytic performance of exfoliated g-C 3 N 4 . The 0D -iron oxide/2D-C 3 N 4 exhibited nearly 10 times better than bulk g-C 3 N 4 and almost 60 % better than exfoliated g-C 3 N 4 under simulated solar light irradiation. The experimental results demonstrated that the effective charge -carrier mechanism led to an improved generation of reactive oxygen species (ROSs), resulting in an impressive photocatalytic performance. A serial photocatalytic test was also conducted to understand photocatalytic reaction mechanisms with various scavengers.Article Citation - WoS: 5Citation - Scopus: 4Polarity Induced Vapochromism and Vapoluminescence of Polythiophene Derivatives for Volatile Organic Compounds Classification(Elsevier, 2023) Karabacak, Soner; Qun, David Lee Chao; Ammanath, Gopal; Yeasmin, Sanjida; Yağmurcukardeş, Mehmet; Palaniappan, Alagappan; Liedberg, Bo; Yıldız, Ümit HakanPolarity induced vapochromic and vapoluminescent properties of cationic poly-3-alkoxythiophene derivatives (PT) casted on polyvinylidene fluoride (PVDF) membranes are reported. PT with six different pendant groups are designed to differentially interact with volatile organic compounds (VOC) of varying polarities, thereby enabling their classification. PT exhibit a rapid vapochromic response with a concurrent modulation of vapoluminescence due to the non-covalent cation-? interactions between the pendant groups and the PT backbone. Adsorption of VOC on pendant groups alters the conformation of PT backbone, thus resulting in an increase in intensity and blue shifting of fluorescence emission within the visible spectrum. The vapoluminescent responses are found to be more sensitive with a limit of detection (LOD) of ?7 ppm and a wider dynamic range as compared to the vapochromic responses with a LOD of ?60 ppm for the detection of a model VOC: chloroform. Notably, all the PT illustrate an instantaneous recovery of colour and luminescence upon desorption of VOC. PT interaction with VOC of varying polarities was ascertained using density functional theory (DFT) and principal component analysis (PCA) methodologies. In summary, the polarity induced vapochromic and vapoluminescent properties of PT could yield a selective and sensitive vapochromic and fluorometric dual-mode VOC detection platform. © 2023Article Citation - WoS: 5Citation - Scopus: 5Thickness-Dependent Piezoelecticity of Black Arsenic From Few-Layer To Monolayer(Elsevier, 2023) Akgenç Hanedar, Berna; Ersan, Fatih; Altalhi, Tariq; Yağmurcukardeş, Mehmet; Yakobson, BorisUltra-thin forms of black phosphorus (b-P) have been widely investigated due to its unique properties arising from the in-plane anisotropy in its crystal structure. Recently, two-dimensional (2D) forms of black arsenic (b-As) have also been added to the 2D family. In this study, the thickness-dependent structural, electronic, and piezoelectric properties of layered b-As are investigated by means of ab-initio calculations. The structural optimizations confirm the van der Waals type layered structure for both these structures. In addition, increasing the thickness is shown to result in the decreasing of the band gap arising from the confinement of electrons in the layers. In contrast to the case of b-P, it is revealed that a transition from indirect-to-direct band gap behavior can be found in b-As which can be important for optically identifying the single-layer structure. Moreover, the piezoelectric properties are investigated as a function of the number of layers. It is shown that while a single-layer of b-As does not exhibit piezoelectric features, even in the case of bilayer structures the piezoelectricity is created. Our results revealed the strong in-plane anisotropy in piezoelectric coefficients for the three-layer and thicker structures. We have shown that the out-of-plane piezoelectric properties can be achieved by non-centrosymmetric features in the out-of-plane direction in thicker structures of b-As.Article Citation - WoS: 11Citation - Scopus: 13Electrical, Photodiode, and Dft Studies of Newly Synthesized Pi-Conjugated Bodipy Dye-Based Au/Bod-dim Device(Elsevier, 2021) Şahin, Muhammet Ferit; Taşcı, Enis; Emrullahoğlu, Mustafa; Gökçe, Halil; Tuğluoğlu, Nihat; Eymur, SerkanA pi-conjugated 4,4-difluoro-4- bora-3a,4a-diaza-s-indacene (BODIPY) dimer (BOD-Dim) compound has been synthesized and characterized. The optimized molecular structure, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) simulations, and static isotropic polarizability of the isolated compound were computed via the Gaussian program. The simulated static dielectric constant value was calculated. The effect of the BOD-Dim interlayer on the diode characteristics of the Au/n-Si diode was investigated. The electrical and photovoltaic parameters of the Au/BOD-Dim/n-Si/In diode such as ideality factor (n), barrier height (phi B), open-circuit voltage (Voc), short-circuit current (Jsc), photosensitivity (S), and photoresponsivity (R) have been investigated by current-voltage measurements at dark and under various illumination intensities. The possible current conduction mechanism has been examined through the forward bias ln (IF)-ln(VF) and ln(IR)-VR1/2 characteristics. All obtained results confirmed that Au/BOD-Dim/n-Si/In diode exhibits a photovoltaic behavior and presents great potential as a photosensor for optoelectronic device applications.Article Citation - WoS: 8Citation - Scopus: 9Cesium Manganese Chloride: Stable Lead-Free Perovskite From Bulk To Single Layer(Elsevier, 2021) Sözen, Yiğit; Özen, Sercan; Şahin, HasanMotivated by the recent advances in perovskite-based solar cells, here we investigate stability, electronic properties and vibrational characteristics of lead-free perovskite, CsMnCl3, and its low dimensional forms by means of first-principles calculations. Structural optimizations reveal that, regardless of whether it is bulk or ultra-thin single layer cubic perovskite structure, CsMnCl3 crystal exhibit robust antiferromagnetism in its ground state due to oppositely aligned magnetic moments of Mn atoms. In addition to total energy calculations, phonon band dispersions indicate that CsMnCl3 structure sustains its dynamical stability down to its thinnest single layer crystal structures. The calculated Raman spectrums state that while the first-order Raman scattering is forbidden for bulk CsMnCl3 due to the cubic symmetry; dimensional-reduction-driven symmetry breaking leads to emergence of experimentally-observable distinctive Raman active modes in bilayer and single-layer crystal structures. Moreover, the electronic band dispersions reveal that from its bulk to ultra-thin single layer structures CsMnCl3 crystals are robust antiferromagnetic insulators. Multiple valid features like controllable dimensionality, robust antiferromagnetism and wide electronic band gap make cubic CsMnCl3 crystal as a potential candidate for nano-scale optoelectronic applications.Article Citation - WoS: 1Citation - Scopus: 1First-Principles Investigation of Structural, Raman and Electronic Characteristics of Single Layer Ge3n4(Elsevier, 2022) Yayak, Yankı Öncü; Sözen, Yiğit; Tan, Fırat; Güngen, Deniz; Gao, Q.; Kang, J.; Yağmurcukardeş, Mehmet; Şahin, HasanBy means of density functional theory-based first-principle calculations, the structural, vibrational and electronic properties of single-layer Ge3N4 are investigated. Structural optimizations and phonon band dispersions reveal that single-layer ultrathin form of Ge3N4 possesses a dynamically stable buckled structure with large hexagonal holes. Predicted Raman spectrum of single-layer Ge3N4 indicates that the buckled holey structure of the material exhibits distinctive vibrational features. Electronic band dispersion calculations indicate the indirect band gap semiconducting nature of single-layer Ge3N4. It is also proposed that single-layer Ge3N4 forms type-II vertical heterostructures with various planar and puckered 2D materials except for single-layer GeSe which gives rise to a type-I band alignment. Moreover, the electronic properties of single-layer Ge3N4 are investigated under applied external in-plane strain. It is shown that while the indirect gap behavior of Ge3N4 is unchanged by the applied strain, the energy band gap increases (decreases) with tensile (compressive) strain. © 2021 Elsevier B.V.Article Citation - WoS: 5Citation - Scopus: 6Contribution of O-2 Plasma Treatment and Amine Modified Gos on Film Properties of Conductive Pedot:pss: Application in Indium Tin Oxide Free Solution Processed Blue Oled(Elsevier, 2019) Diker, Halide; Yeşil, Fatih; Varlıklı, CananPrimary (n-propyl amine, n-PRYLA), secondary (dipropyl amine, DPRYLA) and alcohol (propanol amine, PRPOHA) amine derivatives were used as amine sources in graphene oxide (GO) modification and obtained samples were named as nPRYLA-GO, DPRYLA-GO and PRPOHA-GO, respectively. Modified graphene oxide (mGO) derivatives were doped in poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PH1000) and O-2 plasma treatment (70W, 3 min) was applied on the spin casted films. PH1000:mGO films presented high optical transparency values (> 90%) and low resistivity (177-183 Q/sq). The roughness values were increased especially when the hydrophobic alkyl chain containing DPRYLA-GO and nPRYLA-GO were doped in PH1000. Prepared films were utilized as anode in solution processed blue organic light emitting diode. PH1000:PRPOHA-GO anode presented more than 30 nm of decrement in full with at half maximum and 1.6, 1.5 and 1.9 fold enhancements in current, power and external quantum efficiency values, compared to those of ITO anode, respectively.