Photonics / Fotonik
Permanent URI for this collectionhttps://hdl.handle.net/11147/2590
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Article Citation - WoS: 6Citation - Scopus: 6Novel Ultra-Thin Two-Dimensional Structures of Strontium Chloride(Royal Society of Chemistry, 2020) Akyol, Cansu; Başkurt, Mehmet; Şahin, HasanBy performing density functional theory-based calculations, possible stable ultra-thin crystal structures of SrCl(2)are investigated. Phonon calculations reveal that, among the possible crystal structures, three different phases; namely 1H, 1T, and square, are dynamically stable. In addition,ab initiomolecular dynamics calculations show that these three phases are thermally stable up to well above room temperature. Another important stability factor of crystals, the chemical inertness against abundant molecules in the atmosphere, such as N-2, O-2, H2O, and CO2, is also investigated. The analysis shows that SrCl(2)single-layers are chemically stable against these molecules. Moreover, it is determined that in contact with H2O and CO2, ultra-thin SrCl(2)sheets display unique electronic features, allowing them to be used in sensing applications. It is also shown that single layers of SrCl(2)crystals, all having a wide electronic band gap, can form type-I and type-II vertical van der Waals heterostructures with well-known 2D materials such as MoS2, WSe2, and h-BN.Article Citation - WoS: 11Citation - Scopus: 12Prevalence of Oxygen Defects in an In-Plane Anisotropic Transition Metal Dichalcogenide(American Physical Society, 2020) Plumadore, Ryan; Boddison-Chouinard, Justin; Lopinski, Gregory; Modarresi, Mohsen; Potasz, Pawel; Luican-Mayer, Adina; Başkurt, Mehmet; Şahin, HasanAtomic scale defects in semiconductors enable their technological applications and realization of different quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS2. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.Article Citation - WoS: 14Citation - Scopus: 12Octahedrally Coordinated Single Layered Caf2: Robust Insulating Behaviour(Royal Society of Chemistry, 2020) Başkurt, Mehmet; Kang, Jun; Şahin, HasanUsing first-principles calculations, the structural, vibrational, and electronic properties of single-layered calcium fluoride (CaF2) are investigated. The dynamical stability of 1T-CaF2 is confirmed by the phonon dispersions. Raman active vibrational modes of 1T-CaF2 enable its characterization via Raman spectroscopy. In addition, the calculated electronic properties of 1T-CaF2 confirmed insulating behavior with an indirect wide band gap which is larger than that of a well-known single-layered insulator, h-BN. Moreover, one-dimensional nanoribbons of CaF2 are investigated for two main edge orientations, namely zigzag and armchair, and it is revealed that both structures maintain the 1T nature of CaF2 without any structural edge reconstructions. Electronically, both types of CaF2 nanoribbons display robust insulating behavior with respect to the nanoribbon width. The results show that both the 2D and 1D forms of 1T-CaF2 show potential in nanoelectronics as an alternative to the widely-used insulator h-BN with its similar properties and wider electronic band gap.Article Citation - WoS: 30Citation - Scopus: 32Vanadium Dopant- and Strain-Dependent Magnetic Properties of Single-Layer Vi3(Elsevier, 2020) Başkurt, Mehmet; Eren, İsmail; Yağmurcukardeş, Mehmet; Şahin, HasanMotivated by the recent synthesis of two-dimensional VI3 [Kong et al. Adv. Mater. 31, 1808074 (2019)], we investigate the effect of V doping on the magnetic and electronic properties of monolayer VI3 by means of first-principles calculations. The dynamically stable semiconducting ferromagnetic (FM) and antiferromagnetic (AFM) phases of monolayer VI3 are found to display distinctive vibrational features that the magnetic state can be distinguished by Raman spectroscopy. In order to clarify the effect of experimentally observed excessive V atoms, the magnetic and electronic properties of the V-doped VI3 structures are analyzed. Our findings indicate that partially doped VI3 structures display FM ground state while the fully-doped structure exhibits AFM ground state. The fully-doped monolayer VI3 is found to be a semiconductor with a relatively larger band gap than its pristine structure. In addition, strain-dependent electronic and magnetic properties of fully- and partially-doped VI3 structures reveal that pristine monolayer displays a FM-to-AFM phase transition with robust semiconducting nature for 5% of compressive strain, while fully-doped monolayer VI3 structure possesses AFM-to-FM semiconducting transition at tensile strains larger than 4%. In contrast, the partially-doped VI3 monolayers are found to display robust FM ground state under biaxial strain. Its dopant and strain tunable electronic and magnetic nature makes monolayer VI3 a promising material for applications in nanoscale spintronic devices.Article Citation - WoS: 17Stable Single-Layers of Calcium Halides (cax2, X = F, Cl, Br, I)(American Institute of Physics, 2020) Başkurt, Mehmet; Yağmurcukardeş, Mehmet; Peeters, François M.; Şahin, HasanBy means of density functional theory based first-principles calculations, the structural, vibrational, and electronic properties of 1H- and 1T-phases of single-layer CaX2 (X = F, Cl, Br, or I) structures are investigated. Our results reveal that both the 1H- and 1T-phases are dynamically stable in terms of their phonon band dispersions with the latter being the energetically favorable phase for all single-layers. In both phases of single-layer CaX2 structures, significant phonon softening occurs as the atomic radius increases. In addition, each structural phase exhibits distinctive Raman active modes that enable one to characterize either the phase or the structure via Raman spectroscopy. The electronic band dispersions of single-layer CaX2 structures reveal that all structures are indirect bandgap insulators with a decrease in bandgaps from fluorite to iodide crystals. Furthermore, the calculated linear elastic constants, in-plane stiffness, and Poisson ratio indicate the ultra-soft nature of CaX2 single-layers, which is quite important for their nanoelastic applications. Overall, our study reveals that with their dynamically stable 1T- and 1H-phases, single-layers of CaX2 crystals can be alternative ultra-thin insulators.