Photonics / Fotonik
Permanent URI for this collectionhttps://hdl.handle.net/11147/2590
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Article Citation - WoS: 29Citation - Scopus: 28Fabrication, Illumination Dependent Electrical and Photovoltaic Properties of Au/Bod-pyr Schottky Diode(Springer, 2021) Ongun, Onur; Taşcı, Enis; Emrullahoğlu, Mustafa; Akın, Ummuhan; Tuğluoğlu, Nihat; Eymur, Serkan4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W. Au/BOD-Pyr/n-Si/In Schottky diode were fabricated using thermal evaporation and spin coating technique. The electronic and photovoltaic properties of Au/BOD-Pyr/n-Si/In diode have been investigated by current-voltage (I-V) measurements at dark and under various illumination intensities. The calculated ideality factor and barrier height of the diode in dark were found to be 2.84 and 0.75 eV, respectively. These parameters were also obtained under 100 mW/cm(2) illumination level as 1.55 and 0.87 eV, respectively. The values of open-circuit voltage and short circuit current density were obtained as 0.26 V and 0.56 mA/cm(2) under the illumination level of 100 mW/cm(2). These all findings suggest that Au/BOD-Pyr/n-Si/In diode can be used as photodiode in optoelectronic applications.Article Citation - WoS: 16Citation - Scopus: 16Investigation of Electrical and Photovoltaic Properties of Au/N-si Schottky Diode With Bod-Z Interlayer(Springer, 2021) Tezcan, Ali Osman; Eymur, Serkan; Taşcı, Enis; Emrullahoğlu, Mustafa; Tuğluoğlu, Nihat4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (phi(b)) and series resistance (R-s) have been investigated through current-voltage (I-V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the phi(b) ranged from 0.86 to 0.90 eV as the illumination condition changed from dark to 100 mW/cm(2). Series resistance (R-s) values calculated using Cheung's method were found to decrease with increasing illumination level. The forward bias I-V characteristics of the diode were explained by the space charge limited current theory. The main photovoltaic parameters such as open circuit voltage (V-oc), short circuit current density (J(sc)) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a V-oc of 150 mV and J(sc) of 10 mu A/cm(2) under 100 mw/cm(2). In addition, photosensitivity and photoresponsivity properties of the diode were determined. All these results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.Correction Citation - Scopus: 1Erratum To: Introduction To the Physics of Silicene and Other 2d Materials(Springer, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, Angel[No abstract available]