Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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Author: search.filters.author.İyikanat, FadılInstitution Author: search.filters.institutionAuthor.Akbalı, Barış

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  • Article
    Citation - WoS: 110
    Citation - Scopus: 109
    Structural, Electronic and Phononic Properties of Ptse2: From Monolayer To Bulk
    (IOP Publishing Ltd., 2018) Kandemir, Ali; Akbalı, Barış; Şahin, Hasan; Badalov, S. V.; Özcan, Mehmet; İyikanat, Fadıl; Şahin, Hasan; 04.04. Department of Photonics; 04. Faculty of Science; 01. Izmir Institute of Technology
    The layer dependent structural, electronic and vibrational properties of the 1T phase of two dimensional (2D) platinum diselenide are investigated by means of state-of-the-art first-principles calculations. The main findings of the study are: (i) monolayer platinum diselenide has a dynamically stable 2D octahedral structure with 1.66 eV indirect band gap, (ii) the semiconducting nature of 1T-PtSe2 monolayers remains unaffected even at high biaxial strains, (iii) top-to-top (AA) arrangement is found to be energetically the most favorable stacking of 1T-PtSe2 layers, (iv) the lattice constant (layer-layer distance) increases (decreases) with increasing number of layers, (v) while monolayer and bilayer 1T-PtSe2 are indirect semiconductors, bulk and few-layered 1T-PtSe2 are metals, (vi) Raman intensity and peak positions of the A1g and Eg modes are found to be highly dependent on the layer thickness of the material, hence; the number of layers of the material can be determined via Raman measurements.
  • Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Stable Ultra-Thin Cdte Crystal: a Robust Direct Gap Semiconductor
    (IOP Publishing Ltd., 2017) İyikanat, Fadıl; Akbalı, Barış; Selamet, Yusuf; Senger, Ramazan Tuğrul; Selamet, Yusuf; Senger, Ramazan Tuğrul; Şahin, Hasan; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be derived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities. Moreover, we show that the ultra-thin CdTe has some interesting electromechanical features, such as strain-dependent anisotropic variation of the band gap value, and its rapid increase under perpendicular compression. The direct band gap semiconducting nature of the ultra-thin CdTe crystal remains unchanged under all types of applied strain. With a robust and moderate direct band gap, single-layer CdTe is a promising material for nanoscale strain dependent device applications.