Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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Now showing 1 - 6 of 6
  • Article
    Citation - WoS: 2
    Citation - Scopus: 5
    Experimental Modeling of Antimony Sulfides-Rich Geothermal Deposits and Their Solubility in the Presence of Polymeric Antiscalants
    (Elsevier, 2022) Karaburun, Emre; Sözen, Yiğit; Çiftçi, Celal; Şahin, Hasan; Baba, Alper; Akbey, Ümit; Yeşilnacar, Mehmet İrfan; Erdim, Eray; Regenspurg, Simona; Demir, Mustafa Muammer
    Antimony (Sb)-rich geothermal deposits have been observed in many geothermal power plants worldwide. They occur as red-colored, sulfidic precipitates disturbing energy-harvesting by clogging the geothermal installations. In order to prevent the formation of this scale, information on its physicochemical features is needed. For this purpose, Sb-rich sulfide-based deposits were synthesized at controlled conditions in a pressurized glass reactor at geothermal conditions (135 °C and 3.5 bar). Various polymeric antiscalants with different functional groups, such as acrylic acid, sulphonic acid, and phosphonic acid groups were tested for their effect on Sb sulfide solubility. An additional computational study was performed to determine the binding energy of Sb and S atoms to these groups. The results suggest that sulfonic acid groups are the most affective. Therefore, it was concluded that these macromolecule containing sulfonic acid groups and poly (vinyl sulfonic acid) derivatives could potentially act as antiscalants for the formation of antimony sulfide.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 9
    Cesium Manganese Chloride: Stable Lead-Free Perovskite From Bulk To Single Layer
    (Elsevier, 2021) Sözen, Yiğit; Özen, Sercan; Şahin, Hasan
    Motivated by the recent advances in perovskite-based solar cells, here we investigate stability, electronic properties and vibrational characteristics of lead-free perovskite, CsMnCl3, and its low dimensional forms by means of first-principles calculations. Structural optimizations reveal that, regardless of whether it is bulk or ultra-thin single layer cubic perovskite structure, CsMnCl3 crystal exhibit robust antiferromagnetism in its ground state due to oppositely aligned magnetic moments of Mn atoms. In addition to total energy calculations, phonon band dispersions indicate that CsMnCl3 structure sustains its dynamical stability down to its thinnest single layer crystal structures. The calculated Raman spectrums state that while the first-order Raman scattering is forbidden for bulk CsMnCl3 due to the cubic symmetry; dimensional-reduction-driven symmetry breaking leads to emergence of experimentally-observable distinctive Raman active modes in bilayer and single-layer crystal structures. Moreover, the electronic band dispersions reveal that from its bulk to ultra-thin single layer structures CsMnCl3 crystals are robust antiferromagnetic insulators. Multiple valid features like controllable dimensionality, robust antiferromagnetism and wide electronic band gap make cubic CsMnCl3 crystal as a potential candidate for nano-scale optoelectronic applications.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    First-Principles Investigation of Structural, Raman and Electronic Characteristics of Single Layer Ge3n4
    (Elsevier, 2022) Yayak, Yankı Öncü; Sözen, Yiğit; Tan, Fırat; Güngen, Deniz; Gao, Q.; Kang, J.; Yağmurcukardeş, Mehmet; Şahin, Hasan
    By means of density functional theory-based first-principle calculations, the structural, vibrational and electronic properties of single-layer Ge3N4 are investigated. Structural optimizations and phonon band dispersions reveal that single-layer ultrathin form of Ge3N4 possesses a dynamically stable buckled structure with large hexagonal holes. Predicted Raman spectrum of single-layer Ge3N4 indicates that the buckled holey structure of the material exhibits distinctive vibrational features. Electronic band dispersion calculations indicate the indirect band gap semiconducting nature of single-layer Ge3N4. It is also proposed that single-layer Ge3N4 forms type-II vertical heterostructures with various planar and puckered 2D materials except for single-layer GeSe which gives rise to a type-I band alignment. Moreover, the electronic properties of single-layer Ge3N4 are investigated under applied external in-plane strain. It is shown that while the indirect gap behavior of Ge3N4 is unchanged by the applied strain, the energy band gap increases (decreases) with tensile (compressive) strain. © 2021 Elsevier B.V.
  • Article
    Citation - WoS: 1
    Interaction of Ge With Single Layer Gaas: From Ge-Island Nucleation To Formation of Novel Stable Monolayers
    (Elsevier, 2020) Sözen, Yiğit; Eren, İsmail; Özen, Sercan; Yağmurcukardeş, Mehmet; Şahin, Hasan
    In this study, reactivity of single-layer GaAs against Ge atoms is studied by means of ab initio density functional theory calculations. Firstly, it is shown that Ge atoms interact quite strongly with the GaAs layer which allows the formation of Ge islands while it hinders the growth of detached germanene monolayers. It is also predicted that adsorption of Ge atoms on GaAs single-layer lead to formation of two novel stable single-layer crystal structures, namely 1H-GaGeAs and 1H(A)-GaGeAs. Both the total energy optimizations and the calculated vibrational spectra indicate the dynamical stability of both single layer structures. Moreover, although both structures crystallize in 1H phase, 1H-GaGeAs and 1H(A)-GaGeAs exhibit distinctive vibrational features in their Raman spectra which is quite important for distinguishing the structures. In contrast to the semiconducting nature of single-layer GaAs, both polytypes of GaGeAs exhibit metallic behavior confirmed by the electronic band dispersions. Furthermore, the linear-elastic constants, in-plane stiffness and Poisson ratio, reveal the ultrasoft nature of the GaAs and GaGeAs structures and the rigidity of GaAs is found to be slightly enhanced via Ge adsorption. With their stable, ultra-thin and metallic properties, predicted single-layer GaGeAs structures can be promising candidates for nanoscale electronic and mechanical applications.
  • Article
    Citation - WoS: 15
    Citation - Scopus: 16
    Parametrizing Nonbonded Interactions Between Silica and Water From First Principles
    (Elsevier, 2020) Özçelik, H. Gökberk; Sözen, Yiğit; Şahin, Hasan; Barışık, Murat
    Silica has been used in a vast number of micro/nano-fluidic technologies where interactions of water with silica at the molecular level play a key role. In such small systems, an understanding of mass and heat transport or surface wetting relies on accurate calculations of the water-silica interface coupling through atomic interactions. Molecular dynamics (MD) is a convenient tool for such use, but force field parameters for nonbonded interactions are required as an input, which are very limited in literature. These interaction parameters can be predicted by density functional theory, but dispersion forces are not calculated in standard models for electron correlations that additional correction models have been proposed at different levels of sophistications, and still under development. Accordingly, this work employs state of the art quantum chemistry to compute the binding energies. Force field parameters for silica/water van der Waals interactions were calculated, and later tested in MD simulations of water droplet on silica surface. While the standard dispersion corrections overestimated the binding energy, Becke-Johnson model yielded interactions parameters recovering experimentally measured wetting behavior of silica with a water contact angle of approximately 12.4 degrees on the flat and clean silica surface. Results will be useful for the current molecular modelling attempts by providing transferable parameters for simple silica/water van der Waals interactions as an alternative to existing complex surface interaction models.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 12
    Orthorhombic Cspbi3 Perovskites: Thickness-Dependent Structural, Optical and Vibrational Properties
    (Elsevier, 2020) Özen, Sercan; İyikanat, Fadıl; Özcan, Mehmet; Tekneci, Gülsüm Efsun; Eren, İsmail; Sözen, Yiğit; Şahin, Hasan
    Cesium lead halide perovskites have been subject to intense investigation, mostly because of their potential to be used in optoelectronic device applications. However, regarding the need for nanoscale materials in forthcoming nanotechnology applications, understanding of how the characteristic properties of these perovskite crystals are modified through dimensional crossover is essential. In this study, thickness-dependence of the structural, electronic and vibrational properties of orthorhombic CsPbI3, which is one of the most stable phase at room temperature, is investigated by means of state-of-the-art first-principles calculations. Our results show that (i) bilayers and monolayers of CsPbI3 can be stabilized in orthorhombic crystal symmetry, (ii) among; the possible ultra-thin perovskites only structures with CsI-terminated surface are dynamically stable (iii) electronic band gap increases with decrease in perovskite thickness due to quantum size effect and (iv) reflectivity and transmissivity of the orthorhombic CsPbI3 can be tuned by varying the thickness that modifies the electron confinement. (c) 2019 Elsevier B.V. All rights reserved.