Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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2016 - 20172

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Author: search.filters.author.Senger, Ramazan TuğrulWoS Q: search.filters.wosQuartile.Q3

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Now showing 1 - 2 of 2
  • Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Stable Ultra-Thin Cdte Crystal: a Robust Direct Gap Semiconductor
    (IOP Publishing Ltd., 2017) İyikanat, Fadıl; Akbalı, Barış; Kang, J.; Senger, Ramazan Tuğrul; Selamet, Yusuf; Şahin, Hasan
    Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be derived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities. Moreover, we show that the ultra-thin CdTe has some interesting electromechanical features, such as strain-dependent anisotropic variation of the band gap value, and its rapid increase under perpendicular compression. The direct band gap semiconducting nature of the ultra-thin CdTe crystal remains unchanged under all types of applied strain. With a robust and moderate direct band gap, single-layer CdTe is a promising material for nanoscale strain dependent device applications.
  • Article
    Citation - WoS: 14
    Citation - Scopus: 14
    Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3
    (John Wiley and Sons Inc., 2016) İyikanat, Fadıl; Senger, Ramazan Tuğrul; Peeters, François M.; Şahin, Hasan
    By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.