Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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  • Article
    Citation - WoS: 7
    Citation - Scopus: 6
    L2[gaxfa1–xpbi3]pbi4 (0 ≤ X ≤ 1) Ruddlesden–popper Perovskite Nanocrystals for Solar Cells and Light-Emitting Diodes
    (American Chemical Society, 2022) Güvenç, Çetin Meriç; Tunç, İlknur; Balcı, Sinan
    The main challenges to overcome for colloidal 2D Ruddlesden–Popper (RP) organo-lead iodide perovskite nanocrystals (NCs) are phase instability and low photoluminescence quantum yield (PLQY). Herein, we demonstrate colloidal synthesis of guanidinium (GA)-L2[GAPbI3]PbI4, formamidinium (FA)-L2[FAPbI3]PbI4, and GA and FA alloyed L2[GA0.5FA0.5PbI3]PbI4 NCs without using polar or high boiling point nonpolar solvents. Importantly, we show that optical properties and phase stability of L2[APbI3]PbI4 NCs can be affectively tuned by alloying with guanidinium and formamidinium cations. Additionally, the band gap of NCs can be rapidly engineered by bromide ion exchange in L2[GAxFA1–xPbI3]PbI4 (0 ≤ x ≤ 1) NCs. Our approach produces a stable dispersion of L2[FAPbI3]PbI4 NCs with 12.6% PLQY that is at least three times higher than the previously reported PLQY in the nanocrystals. Furthermore, L2[GAPbI3]PbI4 and L2[GA0.5FA0.5PbI3]PbI4 NC films exhibit improved ambient stability over 10 days, which is significantly higher than L2[FAPbI3]PbI4 NC films, which transform to an undesired 1D phase within 6 days. The colloidally synthesized guanidinium- and formamidinium-based 2D RP organo-lead iodide perovskite NCs with improved stability and high PLQY demonstrated in this study may find applications in solar cells and light-emitting diodes. Therefore, large A-site cation-alloyed 2D RP perovskite NCs may provide a new way to rationalize high-performance and stable perovskite solar cells and light-emitting diodes.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 15
    Hybrid J-aggregate-graphene phototransistor
    (American Chemical Society, 2020) Yakar, Ozan; Balcı, Osman; Uzlu, Burkay; Polat, Nahit; Arı, Ozan; Tunç, İlknur; Balcı, Sinan
    J-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance band in the visible and near-infrared spectrum, and hence they have found many exciting applications in nonlinear optics, sensing, optical devices, photography, and lasing. In silver halide photography, for example, they have enormously improved the spectral sensitivity of photographic process due to their fast and coherent energy migration ability. On the other hand, graphene, consisting of single layer of carbon atoms forming a hexagonal lattice, has a very low absorption coefficient. Inspired by the fact that J-aggregates have carried the role to sense the incident light in silver halide photography, we would like to use Jaggregates to increase spectral sensitivity of graphene in the visible spectrum. Nevertheless, it has been an outstanding challenge to place isolated J-aggregate films on graphene to extensively study interaction between them. We herein noncovalently fabricate isolated J-aggregate thin films on graphene by using a thin film fabrication technique we termed here membrane casting (MC). MC significantly simplifies thin film formation of water-soluble substances on any surface via porous polymer membrane. Therefore, we reversibly modulate the Dirac point of graphene in the J-aggregate/graphene van der Waals (vdW) heterostructure and demonstrate an all-carbon phototransistor gated by visible light. Owing to the hole transfer from excited excitonic thin film to graphene layer, graphene is hole-doped. In addition, spectral and power responses of the all-carbon phototransistor have been measured by using a tunable laser in the visible spectrum. The first integration of J-aggregates with graphene in a transistor structure enables one to reversibly write and erase charge doping in graphene with visible light that paves the way for using J-aggregate/graphene vdW heterostructures in optoelectronic applications.