Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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Author: search.filters.author.Varlıklı, CananSubject: search.filters.subject.Graphene

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  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Contribution of O-2 Plasma Treatment and Amine Modified Gos on Film Properties of Conductive Pedot:pss: Application in Indium Tin Oxide Free Solution Processed Blue Oled
    (Elsevier, 2019) Diker, Halide; Yeşil, Fatih; Varlıklı, Canan
    Primary (n-propyl amine, n-PRYLA), secondary (dipropyl amine, DPRYLA) and alcohol (propanol amine, PRPOHA) amine derivatives were used as amine sources in graphene oxide (GO) modification and obtained samples were named as nPRYLA-GO, DPRYLA-GO and PRPOHA-GO, respectively. Modified graphene oxide (mGO) derivatives were doped in poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PH1000) and O-2 plasma treatment (70W, 3 min) was applied on the spin casted films. PH1000:mGO films presented high optical transparency values (> 90%) and low resistivity (177-183 Q/sq). The roughness values were increased especially when the hydrophobic alkyl chain containing DPRYLA-GO and nPRYLA-GO were doped in PH1000. Prepared films were utilized as anode in solution processed blue organic light emitting diode. PH1000:PRPOHA-GO anode presented more than 30 nm of decrement in full with at half maximum and 1.6, 1.5 and 1.9 fold enhancements in current, power and external quantum efficiency values, compared to those of ITO anode, respectively.
  • Article
    Citation - WoS: 28
    Citation - Scopus: 30
    P3HT-graphene bilayer electrode for Schottky junction photodetectors
    (IOP Publishing Ltd., 2018) Aydın, Hasan; Kalkan, Sırrı Batuhan; Varlıklı, Canan; Çelebi, Cem
    We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.