Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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End date: 2019Publisher: search.filters.publisher.John Wiley and Sons Inc.

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  • Article
    Citation - WoS: 19
    Citation - Scopus: 21
    Fundamental Mechanisms Responsible for the Temperature Coefficient of Resonant Frequency in Microwave Dielectric Ceramics
    (John Wiley and Sons Inc., 2017) Zhang, Shengke; Şahin, Hasan; Torun, Engin; Peeters, François M.; Martien, Dinesh; DaPron, Tyler; Dilley, Neil; Newman, Nathan
    The temperature coefficient of resonant frequency (τf) of a microwave resonator is determined by three materials parameters according to the following equation: τf=−(½ τε + ½ τμ + αL), where αL, τε, and τμ are defined as the linear temperature coefficients of the lattice constant, dielectric constant, and magnetic permeability, respectively. We have experimentally determined each of these parameters for Ba(Zn1/3Ta2/3)O3, 0.8 at.% Ni-doped Ba(Zn1/3Ta2/3)O3, and Ba(Ni1/3Ta2/3)O3 ceramics. These results, in combination with density functional theory calculations, have allowed us to develop a much improved understanding of the fundamental physical mechanisms responsible for the temperature coefficient of resonant frequency, τf.
  • Article
    Citation - WoS: 14
    Citation - Scopus: 14
    Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3
    (John Wiley and Sons Inc., 2016) İyikanat, Fadıl; Senger, Ramazan Tuğrul; Peeters, François M.; Şahin, Hasan
    By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.