Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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  • Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Breaking the Boundaries of the Goldschmidt Tolerance Factor With Ethylammonium Lead Iodide Perovskite Nanocrystals
    (American Chemical Society, 2024) Güvenç, Çetin Meriç; Toso, Stefano; Ivanov, Yurii P.; Saleh, Gabriele; Balcı, Sinan; Divitini, Giorgio; Manna, Liberato
    We report the synthesis of ethylammonium lead iodide (EAPbI3) colloidal nanocrystals as another member of the lead halide perovskites family. The insertion of an unusually large A-cation (274 pm in diameter) in the perovskite structure, hitherto considered unlikely due to the unfavorable Goldschmidt tolerance factor, results in a significantly larger lattice parameter compared to the Cs-, methylammonium- and formamidinium-based lead halide perovskite homologues. As a consequence, EAPbI3 nanocrystals are highly unstable, evolving to a nonperovskite delta-EAPbI3 polymorph within 1 day. Also, EAPbI3 nanocrystals are very sensitive to electron irradiation and quickly degrade to PbI2 upon exposure to the electron beam, following a mechanism similar to that of other hybrid lead iodide perovskites (although degradation can be reduced by partially replacing the EA+ ions with Cs+ ions). Interestingly, in some cases during this degradation the formation of an epitaxial interface between (EA x Cs1-x )PbI3 and PbI2 is observed. The photoluminescence emission of the EAPbI3 perovskite nanocrystals, albeit being characterized by a low quantum yield (similar to 1%), can be tuned in the 664-690 nm range by regulating their size during the synthesis. The emission efficiency can be improved upon partial alloying at the A site with Cs+ or formamidinium cations. Furthermore, the morphology of the EAPbI3 nanocrystals can be chosen to be either nanocube or nanoplatelet, depending on the synthesis conditions.
  • Article
    Citation - WoS: 11
    Citation - Scopus: 11
    Graphene-Quantum Dot Hybrid Optoelectronics at Visible Wavelengths
    (American Chemical Society, 2018) Salihoğlu, Ömer; Kakenov, Nurbek; Balcı, Osman; Balcı, Sinan; Kocabaş, Çoşkun
    With exceptional electronic and gate-tunable optical properties, graphene provides new possibilities for active nanophotonic devices. Requirements of very large carrier density modulation, however, limit the operation of graphene based optical devices in the visible spectrum. Here, we report a unique approach that avoids these limitations and implements graphene into optoelectronic devices working in the visible spectrum. The approach relies on controlling nonradiative energy transfer between colloidal quantum-dots and graphene through gate-voltage induced tuning of the charge density of graphene. We demonstrate a new class of large area optoelectronic devices including fluorescent display and voltage-controlled color-variable devices working in the visible spectrum. We anticipate that the presented technique could provide new practical routes for active control of light-matter interaction at the nanometer scale, which could find new implications ranging from display technologies to quantum optics.
  • Article
    Citation - WoS: 23
    Citation - Scopus: 25
    H-Aln Van Der Waals Bilayer Heterostructure: Tuning the Excitonic Characteristics
    (American Physical Society, 2017) Bacaksız, Cihan; Dominguez, A.; Rubio, A.; Senger, Ramazan Tuğrul; Şahin, Hasan
    Motivated by recent studies that reported the successful synthesis of monolayer Mg(OH)2 [Suslu, Sci. Rep. 6, 20525 (2016)2045-232210.1038/srep20525] and hexagonal (h-)AlN [Tsipas, Appl. Phys. Lett. 103, 251605 (2013)APPLAB0003-695110.1063/1.4851239], we investigate structural, electronic, and optical properties of vertically stacked h-AlN and Mg(OH)2, through ab initio density-functional theory (DFT), many-body quasiparticle calculations within the GW approximation and the Bethe-Salpeter equation (BSE). It is obtained that the bilayer heterostructure prefers the AB′ stacking having direct band gap at the Γ with Type-II band alignment in which the valance band maximum and conduction band minimum originate from different layer. Regarding the optical properties, the imaginary part of the dielectric function of the individual layers and heterobilayer are investigated. The heterobilayer possesses excitonic peaks, which appear only after the construction of the heterobilayer. The lowest three exciton peaks are analyzed in detail by means of band decomposed charge density and the oscillator strength. Furthermore, the wave function calculation shows that the first peak of the heterobilayer originates from spatially indirect exciton where the electron and hole localized at h-AlN and Mg(OH)2, respectively, which is important for the light harvesting applications.