Yüce, Hürriyet
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Yüce Çakır, Hürriyet
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hurriyetyuce@iyte.edu.tr
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03.09. Department of Materials Science and Engineering
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3GOOD HEALTH AND WELL-BEING
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4QUALITY EDUCATION
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5GENDER EQUALITY
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7AFFORDABLE AND CLEAN ENERGY
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8DECENT WORK AND ECONOMIC GROWTH
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9INDUSTRY, INNOVATION AND INFRASTRUCTURE
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9
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134
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Scholarly Output
12
Articles
8
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28945/3486
Supervised MSc Theses
1
Supervised PhD Theses
1
WoS Citation Count
100
Scopus Citation Count
134
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0
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WoS Citations per Publication
8.33
Scopus Citations per Publication
11.17
Open Access Source
6
Supervised Theses
2
| Journal | Count |
|---|---|
| 2015 42nd IEEE International Conference On Plasma Sciences (ICOPS) | 1 |
| 5th International Conference On Photonics, Optics And Laser Technology (Photoptics) | 1 |
| Beilstein Journal of Nanotechnology | 1 |
| Dyes and Pigments | 1 |
| Journal of Physical Chemistry C | 1 |
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12 results
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Now showing 1 - 10 of 12
Article Citation - WoS: 7Citation - Scopus: 7Comparative Study of Annealing and Gold Dopant Effect on Dc Sputtered Vanadium Oxide Films for Bolometer Applications(Springer Verlag, 2017) Alaboz, Hakan; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, LütfiVanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.Article Citation - WoS: 18Citation - Scopus: 46Phosphor-Based White Led by Various Glassy Particles:control Over Luminous Efficiency(The Optical Society, 2019) Yüce, Hürriyet; Güner, Tuğrul; Balcı, Sinan; Demir, Mustafa MuammerGenerating white light through a mainstream remote phosphor design suffers from phosphor conversion efficiency loss due to a backscattering of light. Such a loss also reduces luminous efficiency of the resulting white light. To overcome this issue, various glassy scatterers with different morphologies such as glass bubbles, glass beads, and nanosized silica particles were employed as scatterers, together with a fixed amount of yellow phosphor (YAG:Ce3+) and a poly(dimethylsiloxane) (PDMS) matrix. In addition, the simulation of the system validates the rigorous multiple scattering of the incoming light most probably due to refractive index mismatch between the glass bubbles and surrounding PDMS matrix along with the internal reflections. (C) 2019 Optical Society of AmericaMaster Thesis Characterization of Vanadium Oxide Thin Films Grown by Magnetron Sputtering Technique(Izmir Institute of Technology, 2015) Yüce, Hürriyet; Özyüzer, LütfiVanadium dioxide (VO2) exhibits metal insulator transition (MIT) at around 70 °C. VO2 shows insulator phase at low temperature whereas above the transition temperature VO2 shows metallic phase. The resistivity of this material abruptly changes by a factor of 104 at MIT temperature. There are some factors which induce MIT in VO2 structure such as electric field, the change in temperature or doping. Due to these properties, VO2 is an interesting candidate for exploring potential applications in high speed electronic devices. VO2 plays an important role for field effect transistor (FET) applications. VO2 with its peculiar properties is a good candidate for channel material in FET. Electric field triggered MIT is a desired feature for FET applications. In this work, VO2 thin films have been deposited on c-cut sapphire [Al2O3(0001)] substrate by using DC magnetron sputtering technique. In order to obtain the homogeneous VO2 thin film, the growth process was carried out at various oxygen flow rates with different deposition time. To obtain single VO2 phase, optimum oxygen rate was investigated with various analysis techniques such as Raman, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) and optical-electrical measurements. At the same time, the temperature dependences of optical-electrical properties of these films were analyzed. Then, the metal insulator transition was observed with the change in resistivity by a factor of 104 which is the highest value among grown VO2 films by sputtering technique in the literature. For FET applications, the grown VO2 thin film which indicates the highest change in resistivity at transition temperature was patterned by electron beam lithography in order to create FET channel schema. After electron beam lithography process, the electrical properties of the VO2 strips with various widths were analyzed. The effects of the widths of the VO2 strips on their electrical properties were investigated.Article Citation - WoS: 18Citation - Scopus: 14Optimization and Performance of Nitrogen-Doped Carbon Dots as a Color Conversion Layer for White-Led Applications(Beilstein-Institut Zur Forderung der Chemischen Wissenschaften, 2019) Güner, Tuğrul; Yüce, Hürriyet; Taşçıoğlu, Didem; Şimşek, Eren; Savacı, Umut; Genç, Aziz; Demir, Mustafa MuammerIn this study, green-emitting nitrogen-doped carbon dots (N-CDots) were synthesized and incorporated into drop-cast composite films for use as color conversion layers in a white-LED configuration to generate white light. In order to resolve the red deficiency of this configuration, a commercial red phosphor was integrated into the system. Moreover, the N-CDots were also processed into polymer/N-CDot composite fibers, for which we determined the amount of N-CDots that yielded adequate white-light properties. Finally, we showed that white light with excellent properties could be generated by employing both of the fabricated N-CDot composites either as drop-cast films or composite fibers. Hence, N-CDots provide a promising alternative to inorganic phosphors that are commonly employed in white-LED configurations.Article Citation - WoS: 9Citation - Scopus: 18Improvement of Photophysical Properties of Cspbbr3 and Mn2+:cspb(br,cl)(3) Perovskite Nanocrystals by Sr2+ Doping for White Light-Emitting Diodes(American Chemical Society, 2022) Yüce, Hürriyet; Mandal, Mukunda; Yalçınkaya, Yenal; Andrienko, Denis; Demir, Mustafa MuammerAll-inorganic metal halide perovskite nanocrystals (NCs) having the general formula ABX(3), where A is a monovalent cation, for example, Cs+, B is a divalent cation, typically Pb2+, and X is Cl-, Br-, I-, or their binary mixture, show potential in optoelectronic devices. In this work, we explore the effect of B-site doping on the optoelectronic properties of CsPbX3 NCs (X = Br, Cl). First, the Pb2+ ions in the pristine CsPbBr3 NC are partially substituted by Mn2+ ions. The alkaline earth metal strontium is then doped on both pristine and the Mn2+-substituted NCs. We found that a small percentage of Sr2+ doping remarkably improves the photoluminescence quantum yield of CsPbBr3 and Mn2+-state emission in Mn2+:CsPb(Br,Cl)(3) NCs. Perovskite NC film/ poly(methyl methacrylate) composites with all four NC variants were used in a white light-emitting diode (WLED), where Sr2+ doping increased the luminous efficiency of the WLED by similar to 4.7%. We attribute this performance enhancement to a reduced defect density and an attenuated microstrain in the local NC structure.Article Citation - WoS: 4Citation - Scopus: 4Effects of Alkaline Earth Metal Additives on Methylammonium-Free Lead Halide Perovskite Thin Films and Solar Cells(Wiley, 2022) Yüce, Hürriyet; LaFollette, Diana K.; Demir, Mustafa Muammer; Perini, Carlo A.R.; Correa-Baena, Juan-PabloOrganic–inorganic lead halide perovskite solar cells are regarded as one of the most promising technologies for the next generation of photovoltaics due to their high power conversion efficiency (PCE) and simple solution manufacturing. Among the different compositions, the formamidinium lead iodide (FAPbI3) photoactive phase has a bandgap of 1.4 eV, which enables the corresponding higher PCEs according to the Shockley–Queisser limit. However, the photoactive crystal phase of FAPbI3 is not stable at room temperature. The most high-performing compositions to date have reduced this problem by incorporating the methylammonium (MA) cation into the FAPbI3 composition, although MA has poor stability at high temperatures and in humid environments, which can limit the lifetime of FAxMA1−xPbI3 films. CsxFA1−xPbI3 perovskites are also explored, but despite better stability they still lag in performance. Herein, the additive engineering of MA-free organic−inorganic lead halide perovskites using divalent cations Sr2+ and Ca2+to enhance the performances of CsxFA1−xPbI3 perovskite compositions is explored. It is revealed that the addition of up to 0.5% of Sr2+ and Ca2+ leads to improvements in morphology and reduction in microstrain. The structural improvements observed correlate with improved solar cell performances at low additive concentrations.Article Citation - WoS: 21Citation - Scopus: 22Investigation of Electron Beam Lithography Effects on Metal-Insulator Transition Behavior of Vanadium Dioxide(IOP Publishing Ltd., 2017) Yüce, Hürriyet; Alaboz, Hakan; Demirhan, Yasemin; Özdemir, M.; Özyüzer, Lütfi; Aygün, GülnurVanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.Doctoral Thesis Structural Engineering of Halide Perovskites and Their Association With Organics for Optoelectronic Applications(Izmir Institute of Technology, 2022) Yüce Çakır, Hürriyet; Demir, Mustafa Muammer; Yüksel Aldoğan, KıvılcımHalide perovskites show great potential for next-generation optoelectronic applications due to their unique photophysical properties with low production costs. However, their stability issues still prevent their commercialization on a large scale. The main objective of this dissertation is to understand the additive engineering strategy to improve the quality of halide perovskite films and nanocrystals for solar cells and lightemitting diodes. There are two sections to this dissertation: The first section focuses on halide perovskite films and solar cells while the second one focuses on halide perovskite nanocrystals and white light-emitting diodes. In the first section of this dissertation, in Chapter 2-3, the improvement of Sn-Pb and methylammonium-free Pb-based halide perovskite films by additives are investigated. The suppression of defects via additives is demonstrated through structural, elemental, and optical analyses. The improved performance of perovskite solar cells by decreasing defects is also shown. In Chapter 4-5, the change in stability and optical properties of the halide perovskite nanocrystals by means of additive engineering and their applications in white light-emitting diode are studied. The results in this dissertation represent a new approach to improving the structural and photophysical properties of halide perovskites and introduce a new perspective of additive engineering method in the field of halide perovskite-based optoelectronic applications.Conference Object Terahertz Transmission Through Patterened Vanadium Oxide Thin Films on Dielectric Substrates(SCITEPRESS, 2017) Akkaya, M.; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, Lütfi; Sabah, Cumali; Altan, HakanPatterned and unpatterned films of vanadium oxide grown on dielectric substrates such as fused silica and sapphire were grown and analysed by varying the temperature using terahertz time domain spectroscopy. After investigating the critical transition temperature near 340K, a well-known cross-shaped pattern was studied to observe any resonances upon transmission. Due to the poor conductivity of the films the frequency selective nature of the structure was not observed, however an etalon effect could be seen in the sapphire substrate as opposed to the fused silica substrate above the critical temperature. Dependence of the refractive index difference between substrates upon transmission of the THz pulse is likely in explaining this observed difference.Conference Object Characterization of Vo2 Films Grown by Magnetron Sputtering(Institute of Electrical and Electronics Engineers Inc., 2015) Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, Lütfi; Köklü, Mehtap[No abstract available]