Özden, Selin

Profile URL
https://hdl.handle.net/11147/16355
Name Variants
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Main Affiliation
01. Izmir Institute of Technology
Status
Former Staff
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ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
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WoS Researcher ID

Sustainable Development Goals

NO POVERTY1
NO POVERTY
0
Research Products
ZERO HUNGER2
ZERO HUNGER
0
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GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
0
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QUALITY EDUCATION4
QUALITY EDUCATION
0
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GENDER EQUALITY5
GENDER EQUALITY
0
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
0
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
1
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DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
0
Research Products
INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
1
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REDUCED INEQUALITIES10
REDUCED INEQUALITIES
0
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SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
0
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RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
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CLIMATE ACTION13
CLIMATE ACTION
1
Research Products
LIFE BELOW WATER14
LIFE BELOW WATER
0
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LIFE ON LAND15
LIFE ON LAND
0
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PEACE, JUSTICE AND STRONG INSTITUTIONS16
PEACE, JUSTICE AND STRONG INSTITUTIONS
0
Research Products
PARTNERSHIPS FOR THE GOALS17
PARTNERSHIPS FOR THE GOALS
0
Research Products
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

2

Articles

1

Views / Downloads

1477/1170

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

11

Scopus Citation Count

12

Patents

0

Projects

0

WoS Citations per Publication

5.50

Scopus Citations per Publication

6.00

Open Access Source

2

Supervised Theses

1

JournalCount
Journal of Electronic Materials1
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Scopus Quartile Distribution

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2014 - 20152

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Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Master Thesis
    Characterization of Defect Structure of Epitaxial Cdte Films
    (Izmir Institute of Technology, 2014) Özden, Selin; Selamet, Yusuf
    Mercury Cadmium Telluride (HgCdTe) is widely used material for infrared detection. Epitaxial growths carried on Gallium arsenide (GaAs) substrates gained more attention in recent years due to commercially availability of epi-ready wafers. However, large lattice mismatch between the HgCdTe epilayer and GaAs substrates, and Gallium (Ga) diffusion into HgCdTe layers during growth limit the device performance. In order to decrease large lattice mismatch and hereby dislocations formed at HgCdTe epilayer, a closely lattice matched Cadmium Telluride (CdTe) is preffered buffer layer for Molecular Beam Epitaxial (MBE) growth of HgCdTe. This thesis focuses on a study of defects on (211)B CdTe buffer layers grown on (211)B oriented GaAs substrates by MBE. Prior to epitaxial growth of CdTe layers, to understand the effect of wet cleaning procedure on chemical composition of epi-ready GaAs wafers, piranha solution-based wet chemical etching and oxide removal processes using diluted hydrofluoric acid (HF) were performed on undoped 625≤25 μm thick GaAs(211)B wafers. The surfaces of GaAs wafers were investigated by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The variation of As2O3 and Ga2O3 contents on GaAs (211)B wafers studied by Raman spectroscopy. Following the growth of CdTe (211)B epitaxial films, the quality of CdTe layers were investigated in detail by various characterization techniques such as AFM, SEM, Nomarski Microscopy, X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy. Thicknesses of CdTe layers were calculated via intensity oscillations in the transmittance spectrum of the films.
  • Article
    Citation - WoS: 11
    Citation - Scopus: 12
    Characterization of Cdte Growth on Gaas Using Different Etching Techniques
    (Springer Verlag, 2015) Bilgilisoy, Elif; Özden, Selin; Bakali, Emine; Karakaya, Merve; Selamet, Yusuf
    CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm−2 to 2 × 108 cm−2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm−2 to 7 × 107 cm−2 range for samples with thicknesses <2 μm.