Tarhan, Enver
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Tarhan, E.
Tarhan, E
Tarhan, E
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envertarhan@iyte.edu.tr
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04.05. Department of Pyhsics
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Current Staff
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Sustainable Development Goals
1NO POVERTY
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2ZERO HUNGER
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3GOOD HEALTH AND WELL-BEING
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4QUALITY EDUCATION
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5GENDER EQUALITY
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6CLEAN WATER AND SANITATION
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7AFFORDABLE AND CLEAN ENERGY
3
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8DECENT WORK AND ECONOMIC GROWTH
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9INDUSTRY, INNOVATION AND INFRASTRUCTURE
4
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10REDUCED INEQUALITIES
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11SUSTAINABLE CITIES AND COMMUNITIES
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12RESPONSIBLE CONSUMPTION AND PRODUCTION
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13CLIMATE ACTION
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14LIFE BELOW WATER
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15LIFE ON LAND
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16PEACE, JUSTICE AND STRONG INSTITUTIONS
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Documents
24
Citations
433
h-index
11
This researcher does not have a WoS ID.
Scholarly Output
21
Articles
17
Views / Downloads
42329/9279
Supervised MSc Theses
2
Supervised PhD Theses
2
WoS Citation Count
217
Scopus Citation Count
230
Patents
0
Projects
21
WoS Citations per Publication
10.33
Scopus Citations per Publication
10.95
Open Access Source
16
Supervised Theses
4
| Journal | Count |
|---|---|
| Physica Scripta | 2 |
| Applied Physics Letters | 1 |
| EPJ Applied Physics | 1 |
| International Journal of Modern Physics B | 1 |
| Journal of Dairy Research | 1 |
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21 results
Scholarly Output Search Results
Now showing 1 - 10 of 21
Article Host Isotope Effects on the Oxygen Local Vibrations in Cdte(IOP Publishing Ltd, 2023) Tarhan, Enver; Ramdas, Anant K.Strong absorption peak observed near 350 cm-1 in the infrared spectrum of CdTe is assigned to a localized vibrational mode of 16O impurity atoms at tellurium sites. In this work, we studied the nature of these vibrations in terms of the effect of isotopic mass variations in the nearest neighbor Cd atoms. We showed that Cd atoms with 8 stable natural isotopes of varying abundances cause the observed line shape in the observed localized vibrational absorption peak. To calculate the effect of isotopic mass variations, we used the XY4 molecular model, X being the impurity atom at a host Te atom site and Y's are various isotopes of the host Cd atoms. Corresponding frequencies of local modes were calculated for each possible combinations of neighboring Cd atoms. For an XY4 molecule with Td symmetry, only the triply degenerate Gamma 5 mode is infrared active. The energies of this mode are higher than those of the others. This mode is possible only when all neigboring Cd atoms are the same isotope. To simulate the absorption data, we used a dynamical matrix approach where a force constant is given for each of the bending and stretching potential energy terms. By diagonalization of the dynamical matrix we were able to fit the calculated spectrum to the data with a proper choice of the bending and stretching force constants. A good agreement with the experiment as well as reported force constants for other impurities in CdTe is obtained.Article Study of the Effect of Various Chemical Polishing Treatments on Mbe-Grown Cdte/Gaas (211)b Heterostructures(Sakarya University, 2020) Bilgilisoy, E.; Özçeri, E.; Tarhan, E.A three-inch-diameter high quality CdTe thin film was grown on a GaAs (211)B substrate by molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211)B heterostructure was then cut into several sample pieces. A few as-grown sample pieces were subjected to chemical etching solutions which created etch pits on the surface. The scanning electron microscopy images of such samples were used to calculate the etch pit densities on the surface. In addition, several as-grown samples were subjected to chemical polishing treatments under different conditions to quantify the removal of O and Te-O structures from the surface. Atomic force microscopy was used to determine as-grown and polished surface morphology and the polish rate of chemical solutions. A study of the surface stoichiometry and the chemical composition of the as-grown and polished CdTe (211)B surfaces were carried out by using X-ray photoelectron spectroscopy. Bulk structural qualities of the as-grown and polished samples were studied in terms of the vibrational and phonon modes via confocal Raman spectroscopy. From a comparative analyses of the results, the best chemical polishing conditions for the MBE-grown CdTe (211)B heterostructure were determined. © 2020, Sakarya University. All rights reserved.Doctoral Thesis Single-Photon Generation From Defects and Manipulation With Nanostructures(Izmir Institute of Technology, 2019) Özçeri İyikanat, Elif; Aygün, Gülnur; Tarhan, Enver; Tarhan, Enver; Aygün Özyüzer, GülnurSingle-photon sources are essential components for several applications in the field of quantum information technologies, such as quantum cryptology and quantum computation. To this aim, efficient generation and detection of single-photons are the crucial to be achieved. Among single-photon sources that are extensively studied in the literature, defect centers in solid are very promising due to their room temperature operation and their stability. The aim of this thesis is to generate single photons at room temperature and control their optical properties by nanostructures. Single-photon emission from TMDCs originates from localized weakly bound excitons at cryogenic temperatures due to their small exciton binding energies. However, room temperature SP emission from WS2 can be obtained by creatingWO3 defects. In our study, room temperature emission from defects in WO3 was investigated. Density functional theory calculations showed that the source of the emission can be oxygen defects. Additionally, the emission was brightened by plasmonic gold nanoparticles. Furthermore, defects in two-dimensional (2D) hexagonal boron nitride (hBN) is offered as an efficient room temperature SPS. HBN is a wide bandgap 2D material, in which defect centers create discrete energy level to generate single photons. In our study, reversible single-photon emission control from defects in hBN was demonstrated by Förster-like resonance energy transfer between the single-photon emitter and a graphene layer. To this aim an ionic liquid based device structure was used.Doctoral Thesis Optimization of Zinc Oxide Based Metal - Semiconductor Junction Interface Properties and Applications for Optoelectronic Devices(01. Izmir Institute of Technology, 2024) Güzelaydın, Abdurrahman Halis; Tarhan, EnverThis thesis manifests an experimental investigation on the optoelectronic characteristics of wide band gap thin film zinc oxide semiconductor – metal junction and performance enhancement of ultraviolet photo detectors fabricated utilizing this metal-semiconductor interface. Pristine zinc oxide, aluminum doped zinc oxide and amorphous In-Ga-Zn-O thin film samples with thicknesses varying between 50-250 nm were fabricated from 2' ceramic targets via magnetron sputtering method. Surface properties and thus the zinc oxide – metal junction interface was optimized by altering sputtering parameters. Sputtering gas pressure, power and temperature was varied between 1.5 – 5 mTorr, 50 – 120 W and 25 – 500 °C, respectively. To determine the effects of energetic ion bombardment on the films' surface properties, biases ranging from 5 to 15 W were applied to the substrates during depositions. A 5 nm thick silicon dioxide passivation layer was deposited on zinc oxide thin films to suppress persistent photoconductivity effect. Furthermore, a thermal treatment under ultraviolet irradiation and was applied specifically to amorphous In-Ga-Zn-O thin films after device fabrication to improve their ultraviolet sensing capabilities. Optoelectronic spectral responses of devices were assessed experimentally by using transient photocurrent spectroscopy method. An ultraviolet light source with a 275 nm peak wavelength at 500 µW power was used as illumination source. All devices exhibited photoconductor behavior with ohmic metal-semiconductor junctions under 5 V bias. Amorphous In-Ga-Zn-O Sample 10 attained a dark current of 140 nA and reached a photocurrent level of 3.8 µA with a photo-to-dark current ratio of 27, yielding a spectral response of 1830 A/W. The calculated external quantum efficiency for this device was 825000%.Article Citation - WoS: 8Citation - Scopus: 8Influence of Applied Current Density on the Nanostructural and Light Emitting Properties of N-Type Porous Silicon(World Scientific Publishing Co. Pte Ltd, 2015) Çetinel, A.; Artunç, N.; Şahin, Gündoğdu; Tarhan, EnverEffects of current density on nanostructure and light emitting properties of porous silicon (PS) samples were investigated by field emission scanning electron microscope (FE-SEM), gravimetric method, Raman and photoluminescence (PL) spectroscopy. FE-SEM images have shown that below 60 mA/cm2, macropore and mesopore arrays, exhibiting rough morphology, are formed together, whose pore diameter, pore depth and porosity are about 265-760 nm, 58-63 μ m and 44-61%, respectively. However, PS samples prepared above 60 mA/cm2 display smooth and straight macropore arrays, with pore diameter ranging from 900-1250 nm, porosity of 61-80% and pore depth between 63-69 μm. Raman analyses have shown that when the current density is increased from 10 mA/cm2 to 100 mA/cm2, Raman peaks of PS samples shift to lower wavenumbers by comparison to crystalline silicon (c-Si). The highest Raman peak shift is found to be 3.2 cm-1 for PS sample, prepared at 90 mA/cm2, which has the smallest nanocrystallite size, about 5.2 nm. This sample also shows a pronounced PL, with the highest blue shifting, of about 12 nm. Nanocrystalline silicon, with the smallest nanocrystallite size, confirmed by our Raman analyses using microcrystal model (MCM), should be responsible for both the highest Raman peak shift and PL blue shift due to quantum confinement effect (QCE).Article Citation - WoS: 42Citation - Scopus: 44Growth of Cu2znsns4 Absorber Layer on Flexible Metallic Substrates for Thin Film Solar Cell Applications(Elsevier Ltd., 2015) Yazıcı, Şebnem; Olgar, Mehmet Ali; Akça, Fatime Gülşah; Cantaş, Ayten; Kurt, Metin; Aygün, Gülnur; Tarhan, Enver; Yanmaz, Ekrem; Özyüzer, LütfiIn this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils. © 2015 Elsevier B.V.Article Citation - WoS: 6Citation - Scopus: 10Effect of Annealing on the Density of Defects in Epitaxial Cdte (211)/Gaas(Springer, 2018) Bakali, Emine; Selamet, Yusuf; Tarhan, EnverCdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ∼ 2 × 107 cm−2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm−2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.Article Citation - WoS: 3Citation - Scopus: 3Local Vibrational Modes of Natural Isotopes of Substitutional Oxygen in Cdte(TÜBİTAK - Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, 2020) Tarhan, Enver; Ramdas, Anant K.We investigated the localized vibrational modes (LVM) of natural oxygen containing ${}^{16}O,\;{}^{17}O$ and ${}^{18}O$ isotopes at a substitutional tellurium site in cadmium telluride using infrared absorption spectroscopy at cryogenic temperatures. The main absorption peak observed at 350 cm ?1 was formerly attributed to a fundamental LVM mode (?0) of oxygen at a tellurium site. The relatively weak absorption peaks observed at 331 $cm^{-1}$ and 340 $cm^{-1}$ are assigned as the same $\nu_0$ mode of the ${}^{17}O$ and ${}^{18}O$ isotopes, respectively, based on their relative intensities and spectral positions. The spectral positions were confirmed with theoretical calculations using a linear chain model where the peak position at 350$cm^{-1}$ was taken as the reference for the ${}^{16}O$ isotope. From a least square analysis of the observed peak positions we were able to calculate the force constants from perturbation theory. A Lorentzian line shape analysis of each $\nu_0$ absorption peak, considering the effects of isotopic mass and natural abundance variations of the host Cd atoms, was also carried out to further confirm their assignments. Reasonably good line shape fittings were obtained for $\nu_0$ modes of all isotopes of oxygen.Article Citation - WoS: 9Citation - Scopus: 7Epitaxial Characteristics of Mbe-Grown Znte Thin Films on Gaas (211)b Substrates(Springer, 2019) Özçeri, Elif; Tarhan, EnverHighly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 mu m thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 x 10(7) cm(-2) was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.Article Citation - WoS: 6Citation - Scopus: 6The Growth of Silver Nanostructures on Porous Silicon for Enhanced Photoluminescence: The Role of Agno3 Concentration and Deposition Time(EDP Sciences, 2019) Çetinel, Alper; Artunç, Nurcan; Tarhan, EnverSilver nanostructures were obtained by using the electrodeposition method on n-type porous silicon (PSi) under different deposition times and concentrations of AgNO3 solutions. The analyses of the structural and photoluminescence properties of PSi/Ag were studied by SEM, XRD and photoluminescence spectroscopy. SEM analysis showed that the shape and size of Ag nanostructures significantly depend on the deposition time and concentration. It was found that spherical nanoparticles and thin Ag dendrites were obtained in short deposition times at 1 and 5 mM AgNO3 concentrations, whereas, Ag complex dendrite nanostructures formed in long deposition times. It was also found that only micro-sized Ag particles were formed at 10 mM. XRD results revealed that the degree of crystallization increases with increasing concentration. Photoluminescence analysis showed that the deposition time and concentration of AgNO3 remarkably affect the PL intensity of PSi/Ag samples. We determined a PL enhancement of similar to 2.7 for the PSi/Ag deposited at 120 s for 1 mM AgNO3. The improved PL intensity of PSi/Ag nanostructures can be explained by the combination of quantum confinement and surface states. PL analyses also indicated that with increasing deposition time and AgNO3 concentrations, the PL intensity of PSi/Ag structures significantly decreases due to the auto-extinction phenomenon.
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