Polat, Mustafa
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Polat, M
Polat, M.
Polat, M.
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04.05. Department of Pyhsics
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7
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46
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10
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8
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1
Supervised PhD Theses
1
WoS Citation Count
65
Scopus Citation Count
75
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WoS Citations per Publication
6.50
Scopus Citations per Publication
7.50
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9
Supervised Theses
2
| Journal | Count |
|---|---|
| Journal of Applied Physics | 2 |
| Physical Review B | 2 |
| Journal of Colloid and Interface Science | 1 |
| Materials Research Express | 1 |
| Physica Status Solidi (C) Current Topics in Solid State Physics | 1 |
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Article Citation - WoS: 4Citation - Scopus: 5Identifying Threading Dislocations in Cdte Films by Reciprocal Space Mapping and Defect Decoration Etching(American Institute of Physics, 2018) Polat, Mustafa; Bilgilisoy, Elif; Arı, Ozan; Öztürk, Orhan; Selamet, YusufWe study threading dislocation (TD) density of high-quality cadmium telluride (CdTe) layers grown on a (211) oriented GaAs substrate by molecular beam epitaxy. High-resolution X-ray diffraction was performed to calculate the density of screw-type TDs by measuring the broadening of the asymmetrical (511) Bragg reflections of CdTe epilayers. In addition, total TD densities were determined by the Everson-etching method and were compared with screw TDs. Our results show that the total TD densities in CdTe films were dominated by those with screw character. The screw component TDs are estimated to account for more than 90% of the total TD density. CdTe layers grown at a thickness of less than 3.0 μm typically exhibit the screw TD densities in the 106 cm-2 and 107 cm-2 range. It can be noted that as the nucleation temperature increases, i.e., ≥222 °C, both the area density of TDs with the screw component of the CdTe films and the total TD density are roughly four times larger than those of the epilayer grown at the nucleation temperature of 215 °C. Furthermore, we discuss the influence of the II/VI flux ratio on the density of threading dislocations. The contribution of screw TDs to the total TD density showed a significant decrease in roughly 30% in the case of a high II/VI flux ratio. We further examine the reciprocal space maps in the vicinity of the (422) reflections.Doctoral Thesis Electronic, Magnetic and Transport Properties of Graphene Quantum Dots With Charged Impurities(Izmir Institute of Technology, 2020) Polat, Mustafa; Güçlü, Alev DevrimIn this thesis, electronic, magnetic, and transport properties of armchair edged hexagonal and zigzag edged triangular graphene quantum dots (GQDs) are investigated in the presence of charged impurities. In this manner, a special attention has been paid to the Coulomb impurity problem in these structures. The collapse of the wave functions starting from the 1S$_{1/2}$ state is studied in the presence of not only the Coulomb impurity but also in the presence of a Coulomb charged vacancy with the help of tight-binding and extended mean-field Hubbard (MFH) models. Here, we report an interaction induced renormalization of the critical coupling constant ($\beta_{c}$). In addition, our results suggest that the induced charge for the interacting fermions is smaller than that of the non-interacting fermions. Furthermore, the transport coefficients reveal two different characteristics of the subcritical ($\beta$ $<$ $\beta_{c}$) and supercritical ($\beta$ $>$ $\beta_{c}$) regimes. As for the charged vacancy, the bare carbon vacancy induces a local magnetic moment in the hexagonal GQDs, but it is suppressed when the vacancy is charged with the subcritical Coulomb potential. Except the pristine cases of the GQDs, we numerically study a Coulomb impurity problem for the interacting fermions restricted in disordered hexagonal GQDs. In the presence of randomly distributed lattice defects and spatial potential fluctuations induced by Gaussian impurities, the response of $\beta_{c}$ for atomic collapse is mainly investigated by local density of states (LDOS) calculations within the MFH model. We find that both types of disorder cause an amplification of the critical threshold. As for the zigzag edged triangular GQDs, in the presence of the bare vacancy, we exactly obtain the spin splitting with the help of LDOS calculations in the energy spectrums, which are dominated by the edge states around the Fermi level. Similar to the hexagonal GQDs, if the vacancy is charged, the local magnetic moment disappears in these GQDs.Article Citation - WoS: 5Citation - Scopus: 5Collapse of the Vacuum in Hexagonal Graphene Quantum Dots: a Comparative Study Between Tight-Binding and Mean-Field Hubbard Models(American Physical Society, 2020) Polat, Mustafa; Sevinçli, Haldun; Güçlü, Alev DevrimIn this paper, we perform a systematic study on the electronic, magnetic, and transport properties of the hexagonal graphene quantum dots (GQDs) with armchair edges in the presence of a charged impurity using two different configurations: (1) a central Coulomb potential and (2) a positively charged carbon vacancy. The tight-binding and the half-filled extended Hubbard models are numerically solved and compared with each other in order to reveal the effect of electron interactions and system sizes. Numerical results point out that off-site Coulomb repulsion leads to an increase in the critical coupling constant to beta(c) = 0.6 for a central Coulomb potential. This critical value of beta is found to be independent of the GQD size, reflecting its universality even in the presence of electron-electron interactions. In addition, a sudden downshift in the transmission peaks shows a clear signature of the transition from subcritical beta < beta(c) to the supercritical beta > beta(c) regime. On the other hand, for a positively charged vacancy, collapse of the lowest bound state occurs at beta(c) = 0.7 for the interacting case. Interestingly, the local magnetic moment, induced by a bare carbon vacancy, is totally quenched when the vacancy is subcritically charged, whereas the valley splittings in electron and hole channels continue to exist in both regimes.Article Citation - WoS: 3Citation - Scopus: 3Growth and Characterization of Cdte Absorbers on Gaas by Mbe for High Concentration Pv Solar Cells(John Wiley and Sons Inc., 2015) Arı, Ozan; Polat, Mustafa; Karakaya, Merve; Selamet, YusufCdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm-1 in solar radiation spectrum.Article Citation - WoS: 1Citation - Scopus: 1Quantum Transport Regimes in Quartic Dispersion Materials With Anderson Disorder(Aip Publishing, 2024) Polat, Mustafa; Ozkan, Hazan; Sevincli, HaldunMexican-hat-shaped quartic dispersion manifests itself in certain families of single-layer two-dimensional hexagonal crystals such as compounds of groups III-VI and groups IV-V as well as elemental crystals of group V. A quartic band forms the valence band edge in various of these structures, and some of the experimentally confirmed structures are GaS, GaSe, InSe, SnSb, and blue phosphorene. Here, we numerically investigate strictly one-dimensional and quasi-one dimensional (Q1D) systems with quartic dispersion and systematically study the effects of Anderson disorder on their transport properties with the help of a minimal tight-binding model and Landauer formalism. We compare the analytical expression for the scaling function with simulation data to distinguish the domains of diffusion and localization regimes. In one dimension, it is shown that conductance drops dramatically at the quartic band edge compared to the quadratic case. As for the Q1D nanoribbons, a set of singularities emerge close to the band edge, suppressing conductance and leading to short mean-free-paths and localization lengths. Interestingly, wider nanoribbons can have shorter mean-free-paths because of denser singularities. However, the localization lengths sometimes follow different trends. Our results display the peculiar effects of quartic dispersion on transport in disordered systems. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) licenseArticle Citation - WoS: 12Citation - Scopus: 13Electronic and Magnetic Properties of Graphene Quantum Dots With Two Charged Vacancies(Elsevier, 2020) Kul, Erdoğan Bulut; Polat, Mustafa; Güçlü, Alev DevrimElectronic and magnetic properties of a system of two charged vacancies in hexagonal shaped graphene quantum dots are investigated using a mean-field Hubbard model as a function of the Coulomb potential strength ? of the charge impurities and the distance R between them. For ?=0, the magnetic properties of the vacancies are dictated by Lieb's rules where the opposite (same) sublattice vacancies are coupled antiferromagnetically (ferromagnetically) and exhibit Fermi oscillations. Here, we demonstrate the emergence of a non-magnetic regime within the subcritical region: as the Coulomb potential strength is increased to ??0.1, before reaching the frustrated atomic collapse regime, the magnetization is strongly suppressed and the ground state total spin projection is given by Sz=0 both for opposite and same sublattice vacancy configurations. When long-range electron–electron interactions are included within extended mean-field Hubbard model, the critical value for the frustrated collapse increases from ?cf?0.28 to ?cf?0.36 for R<27Å. © 2020 Elsevier LtdArticle Citation - WoS: 3Citation - Scopus: 3Atomic Collapse in Disordered Graphene Quantum Dots(American Physical Society, 2020) Polat, Mustafa; Güçlü, Alev DevrimIn this paper, we numerically study a Coulomb impurity problem for interacting Dirac fermions restricted in disordered graphene quantum dots. In the presence of randomly distributed lattice defects and spatial potential fluctuations, the response of the critical coupling constant for atomic collapse is mainly investigated by local density of states calculations within the extended mean-field Hubbard model. We find that both types of disorder cause an amplification of the critical threshold. As a result, up to a 34% increase in the critical coupling constant is reported. This numerical result may explain why the Coulomb impurities remain subcritical in experiments, even if they are supercritical in theory. Our results also point to the possibility that atomic collapse can be observed in defect-rich samples such as Ar+ ion bombarded, He+ ion irradiated, and hydrogenated graphene.Master Thesis Characterization of Gaas (211) Surface for Epitaxial Buffer Growth(Izmir Institute of Technology, 2014) Polat, Mustafa; Selamet, YusufGaAs (211)B wafer can be used for the growth of CdTe buffer layer by MBE after thermal desorption of oxide presents on its surface. Then, CdTe buffered GaAs (211)B called as composite substrate can be used as a template for the growth of HgCdTe. Thermal desorption can be detrimental to surface in some cases if the structure and constituents of this oxide are not fully understood. In this thesis, HF:H2O and H2SO4:H2O2:H2O chemical treatments were applied to epiready GaAs (211)B samples for the determination of suitability of their usage for CdTe buffer layer growth. Effects of these wet chemical etching processes on the surface of samples are characterized and determined by various kinds of characterization techniques including XRD, XPS, SEM, EDX, AFM, and optical microscope. We also analyzed samples cut from 3" epiready GaAs (211)B wafers to determine their oxide structures, surface roughnesses, crystal qualities, and surface morphologies. Crystal quality of as-received samples measured by RC were about 18-21 arcsec. Amounts of arsenic and gallium oxides were decreased after HF treatment according to XPS results. Gallium rich surface was obtained for samples treated with piranha solution. Surface roughnesses of samples increased after piranha treatment. However, it was determined that others treated with HF had smaller surface roughnesses than asreceived samples.Article Citation - WoS: 24Citation - Scopus: 29Effect of Ph and Hydration on the Normal and Lateral Interaction Forces Between Alumina Surfaces(Elsevier Ltd., 2006) Polat, M.; Sato, K.; Nagaoka, T.; Watari, K.Interaction forces between alumina surfaces were measured using an AFM-colloid probe method at different pHs. For an α-alumina-sapphire system at acidic pH, the force curve exhibited a well-defined repulsive barrier and an attractive minimum. At basic pH, the interactive force was repulsive at all separations with no primary minimum. Lateral force measurements under the same conditions showed that frictional forces were nearly an order of magnitude smaller at basic pH than those observed at acidic pH. This behavior was attributed to the hydration of the alumina surface. Normal and lateral force measurements with the strongly hydrated ρ-alumina surfaces supported these findings. © 2006 Elsevier Inc. All rights reserved.Article Citation - WoS: 13Citation - Scopus: 16Reciprocal Space Mapping Study of Cdte Epilayer Grown by Molecular Beam Epitaxy on (2 1 1)b Gaas Substrate(IOP Publishing Ltd., 2017) Polat, Mustafa; Arı, Ozan; Öztürk, Orhan; Selamet, YusufWe examine high quality, single crystal CdTe epilayer grown by molecular beam epitaxy (MBE) on (2 1 1)B GaAs substrate using both positions and full width at half maximums (FWHMs) of reciprocal lattice points (RLPs). Our results demonstrate that reciprocal space mapping (RSM) is an effective way to study the structural characteristics of the high-index oriented epitaxial thin films having a large lattice mismatch with the substrate. The measurement method is defined first, and then the influence of shear strain ( xz) on the position of the (5 1 1) node of epilayer is clarified. It is concluded that the lattice tilting is likely to be related with the lattice mismatch. Nondestructive measurement of the dislocation density is achieved by applying the mosaic crystal model. The screw dislocation density, estimated to be 7.56×107 cm2, was calculated utilizing the broadened peakwidths of the asymmetric RLP of the epilayer lattice.