Xps Study of Pulsed Nd:yag Laser Oxidized Si
| dc.contributor.author | Özyüzer, Gülnur Aygün | |
| dc.contributor.author | Aygün, Gülnur | |
| dc.contributor.author | Atanassova, Elenada A. | |
| dc.contributor.author | Kostov, K. | |
| dc.contributor.author | Turan, Raşit | |
| dc.coverage.doi | 10.1016/j.jnoncrysol.2006.03.063 | |
| dc.date.accessioned | 2016-10-10T11:44:24Z | |
| dc.date.available | 2016-10-10T11:44:24Z | |
| dc.date.issued | 2006 | |
| dc.description.abstract | X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region. | en_US |
| dc.description.sponsorship | TÜBİTAK TBAG/U68 and Bulgarian National Science Foundation under the contract F1508 | en_US |
| dc.identifier.citation | Aygün, G., Atanassova, E. A., Kostov, K., and Turan, R. (2006). XPS study of pulsed Nd:YAG laser oxidized Si. Journal of Non-Crystalline Solids, 352(28-29), 3134-3139. doi:10.1016/j.jnoncrysol.2006.03.063 | en_US |
| dc.identifier.doi | 10.1016/j.jnoncrysol.2006.03.063 | en_US |
| dc.identifier.doi | 10.1016/j.jnoncrysol.2006.03.063 | |
| dc.identifier.issn | 0022-3093 | |
| dc.identifier.scopus | 2-s2.0-33745877188 | |
| dc.identifier.uri | http://doi.org/10.1016/j.jnoncrysol.2006.03.063 | |
| dc.identifier.uri | https://hdl.handle.net/11147/2196 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Ltd. | en_US |
| dc.relation.ispartof | Journal of Non-Crystalline Solids | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Neodymium lasers | en_US |
| dc.subject | Laser-matter interactions | en_US |
| dc.subject | Lasers | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | XPS | en_US |
| dc.title | Xps Study of Pulsed Nd:yag Laser Oxidized Si | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.institutional | Özyüzer, Gülnur Aygün | |
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| gdc.description.department | İzmir Institute of Technology. Physics | en_US |
| gdc.description.endpage | 3139 | en_US |
| gdc.description.issue | 28-29 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q2 | |
| gdc.description.startpage | 3134 | en_US |
| gdc.description.volume | 352 | en_US |
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| gdc.oaire.keywords | Silicon | |
| gdc.oaire.keywords | Lasers | |
| gdc.oaire.keywords | Laser-matter interactions | |
| gdc.oaire.keywords | XPS | |
| gdc.oaire.keywords | Neodymium lasers | |
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