Investigation of Electrical and Photovoltaic Properties of Au/N-si Schottky Diode With Bod-Z Interlayer

Abstract

4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (phi(b)) and series resistance (R-s) have been investigated through current-voltage (I-V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the phi(b) ranged from 0.86 to 0.90 eV as the illumination condition changed from dark to 100 mW/cm(2). Series resistance (R-s) values calculated using Cheung's method were found to decrease with increasing illumination level. The forward bias I-V characteristics of the diode were explained by the space charge limited current theory. The main photovoltaic parameters such as open circuit voltage (V-oc), short circuit current density (J(sc)) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a V-oc of 150 mV and J(sc) of 10 mu A/cm(2) under 100 mw/cm(2). In addition, photosensitivity and photoresponsivity properties of the diode were determined. All these results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.