Material Parameters of Quaternary Iii–v Semiconductors for Multilayer Mirrors at 1:55 Μm Wavelength
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Date
Authors
Güden, Mustafa
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Volume Title
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Open Access Color
BRONZE
Green Open Access
No
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Publicly Funded
No
Abstract
Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.
Description
Keywords
Semiconductors, Gallium arsenide semiconductors, Alloys, Optoelectronics
Fields of Science
0103 physical sciences, 01 natural sciences
Citation
Güden, M., and Piprek, J. (1996). Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 m wavelength. Modelling and Simulation in Materials Science and Engineering, 4(4), 349-357.
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OpenCitations Citation Count
82
Volume
4
Issue
4
Start Page
349
End Page
357
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Citations
CrossRef : 73
Scopus : 92
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Mendeley Readers : 96
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92
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88
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1123
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1873
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