Material Parameters of Quaternary Iii–v Semiconductors for Multilayer Mirrors at 1:55 Μm Wavelength

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Authors

Güden, Mustafa

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BRONZE

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No

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Abstract

Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.

Description

Keywords

Semiconductors, Gallium arsenide semiconductors, Alloys, Optoelectronics

Fields of Science

0103 physical sciences, 01 natural sciences

Citation

Güden, M., and Piprek, J. (1996). Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 m wavelength. Modelling and Simulation in Materials Science and Engineering, 4(4), 349-357.

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OpenCitations Citation Count
82

Volume

4

Issue

4

Start Page

349

End Page

357
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Scopus : 92

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88

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1123

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1873

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