Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3
| dc.contributor.author | İyikanat, Fadıl | |
| dc.contributor.author | Senger, Ramazan Tuğrul | |
| dc.contributor.author | Peeters, François M. | |
| dc.contributor.author | Şahin, Hasan | |
| dc.coverage.doi | 10.1002/cphc.201600751 | |
| dc.date.accessioned | 2017-06-15T08:13:17Z | |
| dc.date.available | 2017-06-15T08:13:17Z | |
| dc.date.issued | 2016 | |
| dc.description.abstract | By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material. | en_US |
| dc.description.sponsorship | TUBITAK (113T050--114F397); Flemish Science Foundation (FWO-Vl); Bilim Akademisi-The Science Academy | en_US |
| dc.identifier.citation | İyikanat, F., Senger, R. T., Peeters, F., and Şahin, H. (2016). Quantum-Transport Characteristics of a p–n Junction on Single-Layer TiS3. ChemPhysChem, 17(23), 3985-3991. doi:10.1002/cphc.201600751 | en_US |
| dc.identifier.doi | 10.1002/cphc.201600751 | en_US |
| dc.identifier.doi | 10.1002/cphc.201600751 | |
| dc.identifier.issn | 1439-4235 | |
| dc.identifier.issn | 1439-4235 | |
| dc.identifier.issn | 1439-7641 | |
| dc.identifier.scopus | 2-s2.0-84991736528 | |
| dc.identifier.uri | http://doi.org/10.1002/cphc.201600751 | |
| dc.identifier.uri | https://hdl.handle.net/11147/5774 | |
| dc.language.iso | en | en_US |
| dc.publisher | John Wiley and Sons Inc. | en_US |
| dc.relation | info:eu-repo/grantAgreement/TUBITAK/TBAG/113T050 | en_US |
| dc.relation | info:eu-repo/grantAgreement/TUBITAK/MFAG/114F397 | en_US |
| dc.relation.ispartof | ChemPhysChem | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Doping | en_US |
| dc.subject | Electron transfer | en_US |
| dc.subject | Monolayers | en_US |
| dc.subject | p–n junctions | en_US |
| dc.title | Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3 | en_US |
| dc.type | Article | en_US |
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| gdc.author.id | 0000-0002-6189-6707 | en_US |
| gdc.author.institutional | İyikanat, Fadıl | |
| gdc.author.institutional | Senger, Ramazan Tuğrul | |
| gdc.author.institutional | Şahin, Hasan | |
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| gdc.description.department | İzmir Institute of Technology. Physics | en_US |
| gdc.description.department | İzmir Institute of Technology. Photonics | en_US |
| gdc.description.endpage | 3991 | en_US |
| gdc.description.issue | 23 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
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| gdc.description.startpage | 3985 | en_US |
| gdc.description.volume | 17 | en_US |
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| gdc.oaire.keywords | Electron transfer | |
| gdc.oaire.keywords | Monolayers | |
| gdc.oaire.keywords | p–n junctions | |
| gdc.oaire.keywords | Condensed Matter - Mesoscale and Nanoscale Physics | |
| gdc.oaire.keywords | Mesoscale and Nanoscale Physics (cond-mat.mes-hall) | |
| gdc.oaire.keywords | Doping | |
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