Strain engineering of 2D materials
Loading...
Files
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Open Access Color
Green Open Access
Yes
OpenAIRE Downloads
OpenAIRE Views
Publicly Funded
No
Abstract
When bulk structures are thinned down to their monolayers, degree of orbital interactions, mechanical properties and electronic band dispersion of the crystal structure become highly sensitive to the amount of applied strain. The source of strain on the ultra-thin lattice structure can be (1) an external device or a flexible substrate that can stretch or compress the structure, (2) the lattice mismatch between the layer and neighboring layers or (3) stress induced by STM or AFM tip.
Description
Keywords
Nanosilicon, Silicene, 2D materials, Silicene, 2D materials, Nanosilicon
Fields of Science
Citation
Cahangirov, S., Şahin, H., Le Lay, G., and Rubio, A. (2017). Strain engineering of 2D materials. Introduction to the Physics of Silicene and other 2D Materials, (pp. 87-96). Switzerland: Springer. doi:10.1007/978-3-319-46572-2_6
WoS Q
Scopus Q

OpenCitations Citation Count
3
Volume
Issue
Start Page
87
End Page
96
PlumX Metrics
Citations
Scopus : 5
Captures
Mendeley Readers : 9
Google Scholar™


