Comparison of Electron and Phonon Transport in Disordered Semiconductor Carbon Nanotubes
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Open Access Color
BRONZE
Green Open Access
Yes
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Publicly Funded
No
Abstract
Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications. Disordered nanostructures; Disordered semiconductors; Electron and phonon transports; Electronic application
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Keywords
Disordered nanostructures, Disordered semiconductors, Electron and phonon transports, Electronic application, Thermal conductivity, Carbon nanotubes, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Disordered nanostructures, Carbon nanotubes, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Disordered Systems and Neural Networks (cond-mat.dis-nn), Condensed Matter - Disordered Systems and Neural Networks, Electron and phonon transports, Disordered semiconductors, Thermal conductivity, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Electronic application
Fields of Science
02 engineering and technology, 01 natural sciences, 0103 physical sciences, 0210 nano-technology
Citation
Sevinçli, H., Lehmann, T., Ryndyk, D.A., and Cuniberti, G. (2013). Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes. Journal of Computational Electronics, 12(4), 685-691. doi:10.1007/s10825-013-0539-7
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OpenCitations Citation Count
7
Volume
12
Issue
4
Start Page
685
End Page
691
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CrossRef : 4
Scopus : 8
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Mendeley Readers : 13
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