Comparison of Electron and Phonon Transport in Disordered Semiconductor Carbon Nanotubes

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BRONZE

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Yes

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Abstract

Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications. Disordered nanostructures; Disordered semiconductors; Electron and phonon transports; Electronic application

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Keywords

Disordered nanostructures, Disordered semiconductors, Electron and phonon transports, Electronic application, Thermal conductivity, Carbon nanotubes, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Disordered nanostructures, Carbon nanotubes, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Disordered Systems and Neural Networks (cond-mat.dis-nn), Condensed Matter - Disordered Systems and Neural Networks, Electron and phonon transports, Disordered semiconductors, Thermal conductivity, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Electronic application

Fields of Science

02 engineering and technology, 01 natural sciences, 0103 physical sciences, 0210 nano-technology

Citation

Sevinçli, H., Lehmann, T., Ryndyk, D.A., and Cuniberti, G. (2013). Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes. Journal of Computational Electronics, 12(4), 685-691. doi:10.1007/s10825-013-0539-7

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OpenCitations Citation Count
7

Volume

12

Issue

4

Start Page

685

End Page

691
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CrossRef : 4

Scopus : 8

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Mendeley Readers : 13

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