Gate-Controlled Photoresponse in an Individual Single-Walled Carbon Nanotube Modified With a Fluorescent Protein

dc.contributor.author Kudriavtseva, A.S.
dc.contributor.author Nekrasov, N.P.
dc.contributor.author Krasnikov, D.V.
dc.contributor.author Nasibulin, A.G.
dc.contributor.author Bogdanov, A.M.
dc.contributor.author Bobrinetskiy, I.
dc.date.accessioned 2024-10-25T23:18:49Z
dc.date.available 2024-10-25T23:18:49Z
dc.date.issued 2025
dc.description.abstract Bionanohybrids of carbon nanotubes and fluorescent proteins (FPs) are a promising class of materials for optoelectronic applications. Understanding and controlling the charge transport mechanism between FPs and carbon nanotubes are critical to achieving functional reproducibility and exploring novel synergetic effects. This work demonstrates a novel phenomenon of photocurrent generation in field-effect transistors based on the conjugation of an individual single-walled carbon nanotube (SWCNT) and FPs. When studying the effect of gate voltage on the photoresponse, reversible switching from fast positive to a slow negative photoresponse in bionanohybrids associated with depletion and accumulation modes, respectively is observed. The latter demonstrates a stable memory effect after the light is turned off. It is revealed that in depletion mode, the charge carriers from the protein are not trapped at the interface due to effective screening by the gate potential. It is suggested that the main mechanism in photoresponse switching is a competitive effect between photogating and effective photodoping of the SWCNT by charges trapped at the nanotube interface. The noticeable effect of water molecules can support proton transfer as the main mechanism of charge transfer. This result illustrates that SWCNT/FP bionanohybrids bear great potential for the realization of novel optoelectronic devices. © 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH. en_US
dc.description.sponsorship National Research University of Electronic Technology, MIET; BioSense Institute; Russian Science Foundation, RSF, (19‐19‐00401, 20‐73‐10256); Russian Science Foundation, RSF; Horizon 2020, (664387, 739570); Horizon 2020; Ministry of Education and Science of the Russian Federation, Minobrnauka, (075‐15‐2022‐315); Ministry of Education and Science of the Russian Federation, Minobrnauka en_US
dc.identifier.doi 10.1002/aelm.202400329
dc.identifier.issn 2199-160X
dc.identifier.scopus 2-s2.0-86000431267
dc.identifier.uri https://doi.org/10.1002/aelm.202400329
dc.identifier.uri https://hdl.handle.net/11147/14864
dc.language.iso en en_US
dc.publisher John Wiley and Sons Inc en_US
dc.relation.ispartof Advanced Electronic Materials en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject Field-Effect Transistors en_US
dc.subject Fluorescent Protein en_US
dc.subject Long-Term Memory en_US
dc.subject Photogating en_US
dc.subject Single-Walled Carbon Nanotubes en_US
dc.title Gate-Controlled Photoresponse in an Individual Single-Walled Carbon Nanotube Modified With a Fluorescent Protein en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Bobrinetskiy, Ivan/0000-0003-2380-2594
gdc.author.id Bobrinetskiy, Ivan / 0000-0003-2380-2594 en_US
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gdc.bip.impulseclass C5
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gdc.bip.popularityclass C5
gdc.coar.access open access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial false
gdc.description.department İzmir Institute of Technology en_US
gdc.description.departmenttemp Kudriavtseva A.S., National Research University of Electronic Technology, Moscow, Zelenograd, 124498, Russian Federation, Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov str. 38, Moscow, 119991, Russian Federation, Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russian Federation; Nekrasov N.P., National Research University of Electronic Technology, Moscow, Zelenograd, 124498, Russian Federation; Krasnikov D.V., Center for Photonic Science and Engineering, Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 143026, Russian Federation; Nasibulin A.G., Center for Photonic Science and Engineering, Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 143026, Russian Federation; Bogdanov A.M., Shemyakin–Ovchinnikov Institute of Bioorganic Chemistry, Russian Academy of Sciences, Moscow, 117997, Russian Federation, Department of Photonics, İzmir Institute of Technology, İzmir, 35430, Turkey; Bobrinetskiy I., National Research University of Electronic Technology, Moscow, Zelenograd, 124498, Russian Federation, BioSense Institute – Research and Development Institute for Information Technologies in Biosystems, University of Novi Sad, Novi Sad, 21000, Serbia en_US
gdc.description.issue 3 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q1
gdc.description.volume 11 en_US
gdc.description.woscitationindex Science Citation Index Expanded
gdc.description.wosquality Q1
gdc.identifier.openalex W4403134847
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gdc.oaire.keywords long‐term memory
gdc.oaire.keywords photogating
gdc.oaire.keywords Physics
gdc.oaire.keywords QC1-999
gdc.oaire.keywords field‐effect transistors
gdc.oaire.keywords fluorescent protein
gdc.oaire.keywords Electric apparatus and materials. Electric circuits. Electric networks
gdc.oaire.keywords TK452-454.4
gdc.oaire.keywords single‐walled carbon nanotubes
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