Effect of Nano-Film Thickness on Thermal Resistance at Water/Silicon Interface

dc.contributor.author Yenigün, Onur
dc.contributor.author Barışık, Murat
dc.coverage.doi 10.1016/j.ijheatmasstransfer.2019.01.075
dc.date.accessioned 2020-07-25T22:03:21Z
dc.date.available 2020-07-25T22:03:21Z
dc.date.issued 2019
dc.description.abstract Parallel to the developments in micro/nano manufacturing techniques, component sizes in micro/nano electro mechanical systems have been decreasing to nanometer scales. Decrease in lengths in heat transfer direction below the heat carrier phonon length scales reduces thermal conduction in semiconductors. This study shows that such altered phonon spectrums with the decrease of size also reduce the heat transfer at the solid/liquid interfaces and can be correlated with the thermal conductivity of the slab. Using Molecular Dynamics (MD), we measured heat transfer between water and silicon of different thickness between 5 nm and 60 nm. Silicon slabs exhibit a linear temperature profile through the bulk where thermal conductivities measured based on Fourier law decreased by the decreasing slab thickness. We applied a semi-theoretical formulism on variation of conductivity by slab thickness. At the interface of these slabs and water, heat passage is disturbed due to the phonon mismatch of dissimilar materials, which is mostly considered as solid/liquid couple interface properties by the earlier literature. Resistance for phonon passage characterized as Kapitza length (L-K) is measured for different slab thicknesses at different surface wetting conditions varying between hydrophilic to hydrophobic. Increasing surface wetting decreases the L-K while at a certain wetting, decreasing the slab thickness increases the L-K. Once the L-K of different size slabs normalized by its bulk value (assumed to be the L-K of the thickest slab at the corresponding wetting), L-K variation by silicon thickness shows a universal behavior independent of surface wetting. A mathematical model describing the exponential increase of L-K by decreasing thickness was developed and validated by an earlier model. We further developed a correlation between the corresponding changes of L-K and conductivity with respective to their bulk values by analytically combining two models as (L-K/L-K-(Bulk)) = exp (3.94(k(Bulk) - k)/(k x k(Bulk))), using which L-K can be predicted from available thermal conductivities of a certain material. Results are crucial for thermal management of current and future electronics. (C) 2019 Elsevier Ltd. All rights reserved. en_US
dc.identifier.doi 10.1016/j.ijheatmasstransfer.2019.01.075 en_US
dc.identifier.doi 10.1016/j.ijheatmasstransfer.2019.01.075
dc.identifier.issn 0017-9310
dc.identifier.issn 1879-2189
dc.identifier.scopus 2-s2.0-85060345390
dc.identifier.uri https://doi.org/10.1016/j.ijheatmasstransfer.2019.01.075
dc.identifier.uri https://hdl.handle.net/11147/9054
dc.language.iso en en_US
dc.publisher Elsevier Ltd. en_US
dc.relation.ispartof International Journal of Heat and Mass Transfer en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Nano-scale heat transfer en_US
dc.subject Molecular dynamics en_US
dc.subject Phonon transport en_US
dc.subject Kapitza resistance en_US
dc.title Effect of Nano-Film Thickness on Thermal Resistance at Water/Silicon Interface en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id 0000-0002-6476-1453
gdc.author.id 0000-0002-2413-1991
gdc.author.id 0000-0002-6476-1453 en_US
gdc.author.id 0000-0002-2413-1991 en_US
gdc.author.institutional Yenigün, Onur
gdc.author.institutional Barışık, Murat
gdc.author.institutional Yenigün, Onur
gdc.author.institutional Barışık, Murat
gdc.bip.impulseclass C4
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gdc.coar.access metadata only access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial false
gdc.description.department İzmir Institute of Technology. Mechanical Engineering en_US
gdc.description.endpage 640 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q1
gdc.description.startpage 634 en_US
gdc.description.volume 134 en_US
gdc.description.wosquality Q1
gdc.identifier.openalex W2912848103
gdc.identifier.wos WOS:000462418300056
gdc.index.type WoS
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gdc.oaire.sciencefields 0103 physical sciences
gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
gdc.oaire.sciencefields 01 natural sciences
gdc.openalex.collaboration National
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gdc.opencitations.count 19
gdc.plumx.crossrefcites 24
gdc.plumx.mendeley 31
gdc.plumx.scopuscites 24
gdc.scopus.citedcount 24
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