Freestanding Silicene

dc.contributor.author Cahangirov, Seymur
dc.contributor.author Şahin, Hasan
dc.contributor.author Le Lay, Guy
dc.contributor.author Rubio, Angel
dc.coverage.doi 10.1007/978-3-319-46572-2_2
dc.date.accessioned 2018-01-04T08:28:03Z
dc.date.available 2018-01-04T08:28:03Z
dc.date.issued 2017
dc.description.abstract Obtaining a freestanding 2D graphene flake is relatively easy because it has a naturally occurring 3D layered parent material, graphite, made up of graphene layers weakly bound to each other by van der Waals interaction. In fact, graphite is energetically more favorable than diamond (which is one of the most stable and hard materials on Earth) that is the sp3 hybridized allotrope of carbon. To prepare freestanding graphene, it is enough to come up with a smart procedure for isolating the weakly bound layers of graphite. The same is also true for other layered materials like hexagonal boron nitride, black phosphorus, metal dichalcogenides and oxides. Silicene, on the other hand, doesn’t have a naturally occurring 3D parent material since silicon atoms prefer sp3 hybridization over sp2 hybridization. This makes the synthesis of freestanding silicene very hard, if not impossible. However, it is possible to epitaxially grow silicene on metal substrates and make use of its intrinsic properties by transferring it to an insulating substrate (Tao et al. 2015). In this chapter, we focus on intrinsic properties of freestanding silicene in the absence of the metallic substrate. en_US
dc.identifier.citation Cahangirov, S., Şahin, H., Le Lay, G., and Rubio, A. (2017). Freestanding silicene. Introduction to the Physics of Silicene and other 2D Materials, (pp. 13-39). Switzerland: Springer. doi:10.1007/978-3-319-46572-2_2 en_US
dc.identifier.doi 10.1007/978-3-319-46572-2_2 en_US
dc.identifier.doi 10.1007/978-3-319-46572-2_2
dc.identifier.isbn 978-3-319-46570-8
dc.identifier.issn 0075-8450
dc.identifier.issn 0075-8450
dc.identifier.scopus 2-s2.0-84994639442
dc.identifier.uri http://doi.org/10.1007/978-3-319-46572-2_2
dc.identifier.uri https://hdl.handle.net/11147/6645
dc.language.iso en en_US
dc.publisher Springer Verlag en_US
dc.relation.ispartof Introduction to the Physics of Silicene and other 2D Materials en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject Nanosilicon en_US
dc.subject Silicene en_US
dc.subject 2D materials en_US
dc.title Freestanding Silicene en_US
dc.type Book Part en_US
dspace.entity.type Publication
gdc.author.institutional Şahin, Hasan
gdc.author.yokid 216960
gdc.bip.impulseclass C5
gdc.bip.influenceclass C5
gdc.bip.popularityclass C5
gdc.coar.access open access
gdc.coar.type text::book::book part
gdc.collaboration.industrial false
gdc.description.department İzmir Institute of Technology. Photonics en_US
gdc.description.endpage 39 en_US
gdc.description.publicationcategory Kitap Bölümü - Uluslararası en_US
gdc.description.scopusquality Q4
gdc.description.startpage 13 en_US
gdc.description.wosquality N/A
gdc.identifier.openalex W4253208650
gdc.identifier.wos WOS:000400260500002
gdc.index.type WoS
gdc.index.type Scopus
gdc.oaire.diamondjournal false
gdc.oaire.impulse 0.0
gdc.oaire.influence 2.727797E-9
gdc.oaire.isgreen true
gdc.oaire.keywords Silicene
gdc.oaire.keywords 2D materials
gdc.oaire.keywords Nanosilicon
gdc.oaire.popularity 3.9117474E-9
gdc.oaire.publicfunded false
gdc.openalex.collaboration International
gdc.openalex.fwci 0.0
gdc.openalex.normalizedpercentile 0.62
gdc.opencitations.count 4
gdc.plumx.mendeley 16
gdc.plumx.scopuscites 11
gdc.scopus.citedcount 11
gdc.wos.citedcount 5
relation.isAuthorOfPublication.latestForDiscovery aed30788-8c12-4d10-a4c5-e41f9f355a87
relation.isOrgUnitOfPublication.latestForDiscovery 9af2b05f-28ac-4010-8abe-a4dfe192da5e

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Name:
6645.pdf
Size:
2.87 MB
Format:
Adobe Portable Document Format
Description:
BookPart

License bundle

Now showing 1 - 1 of 1
Loading...
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description: