Cleavage Induced Rows of Missing Atoms on Znte (110) Surface

Abstract

Cleavage induced rows of linear vacancy structures on p-doped ZnTe (110) surface are studied at room temperature by using cross-sectional scanning tunneling microscopy (X-STM). The oscillating contrast superimposed on the Te-driven occupied states neighboring to the vacancy cores are characterized at the atomic scale in order to determine the type of the missing component on the ZnTe surface matrix. We identify three major intensity distributions associated with different vacancy states. The X-STM images of three possible configurations comprising Zn only, Te only, and ZnTe binary vacancy structures on the ZnTe surface are modeled by using ab initio density functional theory calculations. The comparison of the X-STM measurements of each individual vacancy state to the corresponding theoretical simulation showed that unlike the Te vacancy, which leads to a local depression, the absence of Zn only or ZnTe binary gives rise to hillock features on the neighboring Te states of the ZnTe (110) cleaved surface. The theoretical STM images calculated for an undoped ZnTe crystal imply that possible doping-related effects on vacancy-induced features can be disregarded for interpreting the experimentally observed vacancy structures in our samples.