Modification of Al-Oxide Tunnel Barriers With Organic Self-Assembled Monolayers

Abstract

Al-oxide tunneling barriers were modified by exposure to a vapor of n-octadecyltrimethoxysilane which forms self-assembled monolayers. The dynamic conductance dI/dV of the modified Al-oxide barrier between Al and Pb electrodes was measured at 4.2 K. Quasilinear conductance backgrounds are observed up to 200 mV with a strength that increases with increasing exposure time from 10 to 60 min. A saturation effect is observed around 200 mV. Beyond 200 mV the dynamic conductance shows a parabolic behavior indicative of elastic tunneling from an asymmetric barrier. The linear background is attributed to inelastic tunneling from a continuum of excitations