Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 63Citation - Scopus: 64Vacancy Formation and Oxidation Characteristics of Single Layer Tis3(American Chemical Society, 2015) İyikanat, Fadıl; Şahin, Hasan; Senger, Ramazan Tugrul; Peeters, François M.The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively charged surfaces of single layer TiS3 makes this crystal a promising material for lubrication applications. The formation energies of possible vacancies, i.e. S, Ti, TiS, and double S, are investigated via total energy optimization calculations. We found that the formation of a single S vacancy was the most likely one among the considered vacancy types. While a single S vacancy results in a nonmagnetic, semiconducting character with an enhanced band gap, other vacancy types induce metallic behavior with spin polarization of 0.3-0.8 μB. The reactivity of pristine and defective TiS3 crystals against oxidation was investigated using conjugate gradient calculations where we considered the interaction with atomic O, O2, and O3. While O2 has the lowest binding energy with 0.05-0.07 eV, O3 forms strong bonds stable even at moderate temperatures. The strong interaction (3.9-4.0 eV) between atomic O and TiS3 results in dissociative adsorption of some O-containing molecules. In addition, the presence of S-vacancies enhances the reactivity of the surface with atomic O, whereas it had a negative effect on the reactivity with O2 and O3 molecules.Article Citation - WoS: 12Citation - Scopus: 12High Transmission Through a 90° Bend in a Polarization-Independent Single-Mode Photonic Crystal Waveguide(The Optical Society, 2015) Erol, Adem Enes; Sözüer, Hüseyin SamiWe propose a polarization-independent single-mode waveguide, using a two-dimensional square photonic crystal with a complete band gap. The waveguide is tuned such that both TE and TM modes have the same group velocity and zero group velocity dispersion at the centergap frequency. We also present results for a 90° bend with transmission values of 98% for both modes.Article Citation - WoS: 42Citation - Scopus: 44Growth of Cu2znsns4 Absorber Layer on Flexible Metallic Substrates for Thin Film Solar Cell Applications(Elsevier Ltd., 2015) Yazıcı, Şebnem; Olgar, Mehmet Ali; Akça, Fatime Gülşah; Cantaş, Ayten; Kurt, Metin; Aygün, Gülnur; Tarhan, Enver; Yanmaz, Ekrem; Özyüzer, LütfiIn this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils. © 2015 Elsevier B.V.Article Citation - WoS: 31Citation - Scopus: 30Absence of Pseudogap in Heavily Overdoped Bi2sr2cacu2o8+? From Tunneling Spectroscopy of Break Junctions(Institute of Physics Publishing, 2002) Özyüzer, Lütfi; Zasadzinski, John F.; Gray, Kenneth E.; Kendziora, Christopher A.; Miyakawa, NobuakiWe report tunneling spectroscopy of superconductor-insulator-superconductor break junctions on heavily overdoped Bi2Sr2CaCu2O8+δ with Tc = 56 K. At T ≪ Tc, the junction conductances display well-defined quasiparticle peaks at ±2Δ and in some cases a Josephson current at zero bias. Gap values as small as Δ = 10.5 meV have been observed leading to 2Δ/kTc near the BCS limit for dx2-y2 pairing. Temperature dependence of the gap magnitude, Δ(T), follows the BCS relation and both the quasiparticle gap and Josephson current vanish for T > Tc. Above Tc, the tunneling conductance shows a flat background without any indication of a pseudogap near the Fermi level.Article Citation - WoS: 1Citation - Scopus: 1Modification of Al-Oxide Tunnel Barriers With Organic Self-Assembled Monolayers(American Institute of Physics, 1999) Okur, Salih; Zasadzinski, John F.Al-oxide tunneling barriers were modified by exposure to a vapor of n-octadecyltrimethoxysilane which forms self-assembled monolayers. The dynamic conductance dI/dV of the modified Al-oxide barrier between Al and Pb electrodes was measured at 4.2 K. Quasilinear conductance backgrounds are observed up to 200 mV with a strength that increases with increasing exposure time from 10 to 60 min. A saturation effect is observed around 200 mV. Beyond 200 mV the dynamic conductance shows a parabolic behavior indicative of elastic tunneling from an asymmetric barrier. The linear background is attributed to inelastic tunneling from a continuum of excitations