Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 9Citation - Scopus: 9High Voltage Response of Graphene/4h-sic Uv Photodetector With Low Level Detection(Elsevier, 2023) Jehad, Ala K.; Ünverdi, Özhan; Çelebi, CemA self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a p-i-n like-structure with high voltage response has been fabricated to detect and measure low intensity ultraviolet (UV) radiation. Bilayer graphene sheet grown by chemical vapor deposition (CVD) method was transferred on the top of an epilayer structure of n-/n+ 4 H-SiC. In this structure, two Schottky contacts were formed: one at G/ n- 4H-SiC interface and the other at bulk-4 H-SiC/Cr/Au interface. The photodetector's characteristic measurements revealed low dark current of - 0.58 nA and spectral voltage responsivity of - 0.75 V/W at 300 nm wavelength. Under low level UV illumination of 300 nm wavelength, the photodetector exhibited a leakage current and a photogenerated response voltage of 1.1 nA and 10 mV, respectively. The time-dependent photovoltage measurements displayed a rapid photovoltage response with rise and decay times of -74 ns and - 580 ns, respectively. This novel device holds promise for applications requiring sensitive and self-powered UV detection.Article Citation - Scopus: 1Production and Dispersion of Plasma Functionalized Carbon Nanotubes in Pan Fiber Spinning Solution With Different Surfactants(MMOB Tekstil Mühendisleri Odası, 2022) Kutlu, Bengi; Akşit, Aysun; Özyüzer, Lütfi; Yağmurcukardeş, Nesli; Selamet, YusufIn this study, the distribution of plasma-functionalized multi-walled carbon nanotubes in polyacrylonitrile nanocomposite fibers produced by wet spinning method using different surfactants (Triton-X and sodium dodecyl sulfate) was investigated. Firstly, we produced CNTs by chemical vapor deposition (CVD) technique. Secondly, low-pressure plasma functionalization of CNTs was realized. Finally, nanocomposite polyacrylonitrile fibers doped by CNTs were obtained using wet spinning technique. Properties of produced carbon nanotubes, functionalized carbon nanotubes and nanocomposite polyacrylonitrile fibers were examined by the analyses of chemical composition, surface structure, structural and mechanical properties.Article Citation - WoS: 2Citation - Scopus: 2Enhancing the Photo-Response Characteristics of Graphene/N-si Based Schottky Barrier Photodiodes by Increasing the Number of Graphene Layers(AVS, 2022) Fidan, Mehmet; Ünverdi, Özhan; Çelebi, CemThe impact of the number of graphene layers on the spectral responsivity and response speed of graphene/n-type Si (Gr/n-Si)-based Schottky barrier photodiodes is investigated. Gr/n-Si photodiode devices are fabricated by transferring chemical vapor deposition-grown graphene layers one by one on n-Si substrates, reaching up to three graphene layers. The devices show a clear rectifying Schottky character and have a maximum responsivity at a peak wavelength of 905 nm. Wavelength-resolved and time-dependent photocurrent measurements demonstrated that both spectral responsivity and response speed are enhanced as the number of graphene layers is increased from 1 to 3 on n-Si substrates. For example, the spectral responsivity and the response speed of the fabricated device were found to be improved by about 15% (e.g., from 0.65 to 0.75 AW-1) and 50% (e.g., 14 to 7 μs), respectively, when three graphene layers are used as the hole-collecting cathode electrode. The experimentally obtained results showed that the device parameters, such as spectral responsivity and response speed of Gr/n-Si Schottky barrier photodiodes, can be boosted simply by increasing the number of graphene layers on n-Si substrates.Article Citation - WoS: 6Citation - Scopus: 6Few-Layer Mos2 as Nitrogen Protective Barrier(IOP Publishing Ltd., 2017) Akbalı, Barış; Yanılmaz, Alper; Tomak, Aysel; Tongay, Sefaattin; Çelebi, Cem; Şahin, HasanWe report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.Article Citation - WoS: 28Citation - Scopus: 31The Effects of Catalyst Pretreatment, Growth Atmosphere and Temperature on Carbon Nanotube Synthesis Using Co-mo/Mgo Catalyst(Elsevier Ltd., 2015) İnce Yardımcı, Atike; Yılmaz, Selahattin; Selamet, YusufThe growth of high quality and high yield carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CVD) of CH4 over Co-Mo/MgO catalyst was investigated for different growth temperatures and H2 flow rates. It was observed that CNT yield decreased with the H2 flow rate, however, quality increased with increasing H2 flow rate. CNT yield increased for the temperatures 850-950 °C but dropped significantly above 950 °C. In this study, the highest yield of 1526% was obtained at the growth temperature of 950 °C. The optimum H2 flow rate was 200 sccm; this rate gave both high graphitization and high yield of product. Various CNT growth atmospheres including Ar, H2 and the mixture of both gases were also analyzed and it was observed that the highest quality CNTs were obtained for both pretreatment and growth carried out with H2. This gave a high yield of 292%. On the other hand, CNT growth carried out under Ar atmosphere gave higher CNT yield of 368%, however, the CNTs grown with Ar were more defective and had larger diameters. Prime novelty statement We demonstrate a sorbitol added catalysis synthesis method and importance of the ideal growth conditions to improve high quality single walled carbon nanotube yield up to 1500%.Article Citation - WoS: 15Citation - Scopus: 14Development of Electrically Conductive and Anisotropic Gel-Coat Systems Using Cnts(Elsevier Ltd., 2013) İnce Yardımcı, Atike; Tanoğlu, Metin; Selamet, YusufElectrical conductivity of an unsaturated thermoset polyester based gel-coat system containing 0.05 wt.% of carbon nanotubes (CNTs) was investigated. The CNTs used were synthesized by chemical vapor deposition method by methane decomposition and Raman characterization showed that they were mostly single walled and high quality. To disperse CNTs in the gel-coat resin, 3-roll milling technique was used. It was found that as the CNTs are added to gel-coat system, resistivity value decreases significantly while neat gel-coat showed a high resistivity. By the application of an AC electrical field during curing process, it was attempted to align CNTs in the gel-coat resin and an electrically anisotropic polymer was obtained. © 2012 Elsevier B.V. All rights reserved.Conference Object Citation - WoS: 5Citation - Scopus: 5Photoconductivity Spectroscopy in Hydrogenated Microcrystalline Silicon Thin Films(Springer Verlag, 2003) Güneş, Mehmet; Akdaş, Deniz; Göktaş, Oktay; Carius, Reinhard; Klomfaß, Josef; Finger, FriedhelmSteady-state photoconductivity and sub-bandgap absorption measurements by the dual-beam photoconductivity (DBF) method were carried out on undoped hydrogenated microcrystalline silicon thin films prepared by VHF-PECVD and hot-wire chemical vapor deposition. The results are compared with those of the constant-photocurrent method (CPM) and photothermal deflection spectroscopy (PDS). It is found that DBP, CPM, and PDS provide complementary data on the optoelectronic processes in microcrystalline silicon.