Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Book Part Citation - WoS: 6Citation - Scopus: 5Strain engineering of 2D materials(Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, AngelWhen bulk structures are thinned down to their monolayers, degree of orbital interactions, mechanical properties and electronic band dispersion of the crystal structure become highly sensitive to the amount of applied strain. The source of strain on the ultra-thin lattice structure can be (1) an external device or a flexible substrate that can stretch or compress the structure, (2) the lattice mismatch between the layer and neighboring layers or (3) stress induced by STM or AFM tip.Book Part Citation - WoS: 7Citation - Scopus: 10Germanene, Stanene and Other 2d Materials(Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, AngelGermanene and stanene (also sometimes written stannene or called tinene) are 2D materials composed of germanium and tin atoms respectively arranged in a honeycomb structure similarly to graphene and silicene. The atomic structure of freestanding germanene and stanene is buckled like in the case of silicene (see Figure 2.4DFT calculations (Kresse and Joubert, Phys Rev B 59:1758-1775, 1999) performed by projector augmented wave (PAW) method (BlÖchl, Phys Rev B 50:17953-17979, 1994) and adopting PBE functional (Perdew et al. Phys Rev Lett 77:3865-3868, 1996) result in a lattice constants 4.06 and 4.67Å and buckling heights of 0.69 and 0.85Å for germanene and stanene respectively.Book Part Citation - Scopus: 1Multilayer Silicene(Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, AngelSilicon does not have a naturally occurring layered allotrope like graphite. However, it is possible to grow monolayer silicene on substrates, as we have seen in Chap. 3. Extending this idea further, one may wonder whether it is possible to synthesize layered silicon structures by continuing the growth started as a monolayer silicene. In this chapter we discuss the experimental and theoretical works that are based on this idea of multilayer silicene growth.Book Part Citation - WoS: 1Citation - Scopus: 2Silicene on Ag Substrate(Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, AngelThe isolation of graphene sheets from its parent crystal graphite has given the kick to experimental research on its prototypical 2D elemental cousin, silicene (Brumfiel 2013). Unlike graphene, silicene lacks a layered parent material from which it could be derived by exfoliation, as mentioned in Chap. 2. Hence, the efforts of making the silicene dream a reality were focused on epitaxial growth of silicene on substrates. The first synthesis of epitaxial silicene on silver (111) (Vogt et al. 2012; Lin et al. 2012) and zirconium diboride templates (Fleurence et al. 2012) and next on an iridium (111) surface (Meng et al. 2013), has boosted research on other elemental group IV graphene-like materials, namely, germanene and stanene (Matthes et al. 2013; Xu et al. 2013). The boom is motivated by several new possibilities envisaged for future electronics, typically because of the anticipated very high mobilities for silicene and germanene (Ye et al. 2014), as well as potential optical applications (Matthes et al. 2013). It is also fuelled by their predicted robust 2D topological insulator characters (Liu et al. 2011; Ezawa 2012) and potential high temperature superconductor character (Chen et al. 2013; Zhang et al. 2015). One of the most promising candidates as a substrate is Ag because from the studies of the reverse system, where Ag atoms were deposited on silicon substrate, it was known that Ag and silicon make sharp interfaces without making silicide compounds (Le Lay 1983). Indeed, studies on synthesis and characterization of silicene is mainly focused on using Ag(111) as substrates and hence we think it is important to understand this particular system. In this chapter, we present the experimental and theoretical studies investigating the atomic and electronic structure of silicene on Ag substrates.Book Part Citation - WoS: 5Citation - Scopus: 11Freestanding Silicene(Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, AngelObtaining a freestanding 2D graphene flake is relatively easy because it has a naturally occurring 3D layered parent material, graphite, made up of graphene layers weakly bound to each other by van der Waals interaction. In fact, graphite is energetically more favorable than diamond (which is one of the most stable and hard materials on Earth) that is the sp3 hybridized allotrope of carbon. To prepare freestanding graphene, it is enough to come up with a smart procedure for isolating the weakly bound layers of graphite. The same is also true for other layered materials like hexagonal boron nitride, black phosphorus, metal dichalcogenides and oxides. Silicene, on the other hand, doesn’t have a naturally occurring 3D parent material since silicon atoms prefer sp3 hybridization over sp2 hybridization. This makes the synthesis of freestanding silicene very hard, if not impossible. However, it is possible to epitaxially grow silicene on metal substrates and make use of its intrinsic properties by transferring it to an insulating substrate (Tao et al. 2015). In this chapter, we focus on intrinsic properties of freestanding silicene in the absence of the metallic substrate.Book Part A Brief History of Silicene(Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, AngelResearch on silicene shows a fast and steady growth that has increased our tool-box of novel 2D materials with exceptional potential applications in materials science. Especially after the experimental synthesis of silicene on substrates in 2012 it has attracted substantial interest from both theoretical and experimental communities. Every day, new people from various disciplines join this rapidly growing field. The aim of this book is to serve as a fast entry to the field to these newcomers and as a long-living reference to the growing community. To achieve this goal, the book is designed to emphasize the most crucial developments from both theoretical and experimental point of view since the starting of the silicene field back in 1994 with the first theoretical paper proposing the structure of silicene. We provide the general concepts and ideas such that the book is accessible to everybody from graduate students to senior researchers and we refer the reader interested in the detail to the relevant literature. We now start with a brief history of silicene where we highlight, in the chronological order, the important works that shaped our understanding of silicene.Article Citation - WoS: 149Citation - Scopus: 149Hexagonal Aln: Dimensional-Crossover Band-Gap Transition(American Physical Society, 2015) Bacaksız, Cihan; Şahin, Hasan; Özaydın, H. Duygu; Horzum, Şeyda; Senger, Ramazan Tugrul; Peeters, François M.Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas, Appl. Phys. Lett. 103, 251605 (2013)APPLAB0003-695110.1063/1.4851239], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1, which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA′-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N=1-9, we predict that thicker structures (N≥10) have a direct band gap at the Γ point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.Article Citation - WoS: 35Citation - Scopus: 33Portlandite Crystal: Bulk, Bilayer, and Monolayer Structures(American Physical Society, 2015) Aierken, Y.; Şahin, Hasan; İyikanat, Fadıl; Horzum, Şeyda; Süslü, A.; Chen, B.; Senger, Ramazan Tugrul; Tongay, S.; Peeters, François M.Ca(OH)2 crystals, well known as portlandite, are grown in layered form, and we found that they can be exfoliated on different substrates. We performed first principles calculations to investigate the structural, electronic, vibrational, and mechanical properties of bulk, bilayer, and monolayer structures of this material. Different from other lamellar structures such as graphite and transition-metal dichalcogenides, intralayer bonding in Ca(OH)2 is mainly ionic, while the interlayer interaction remains a weak dispersion-type force. Unlike well-known transition-metal dichalcogenides that exhibit an indirect-to-direct band gap crossover when going from bulk to a single layer, Ca(OH)2 is a direct band gap semiconductor independent of the number layers. The in-plane Young's modulus and the in-plane shear modulus of monolayer Ca(OH)2 are predicted to be quite low while the in-plane Poisson ratio is larger in comparison to those in the monolayer of ionic crystal BN. We measured the Raman spectrum of bulk Ca(OH)2 and identified the high-frequency OH stretching mode A1g at 3620cm-1. In this study, bilayer and monolayer portlandite [Ca(OH)2] are predicted to be stable and their characteristics are analyzed in detail. Our results can guide further research on ultrathin hydroxites.Article Citation - WoS: 67Citation - Scopus: 66Tis3 Nanoribbons: Width-Independent Band Gap and Strain-Tunable Electronic Properties(American Physical Society, 2015) Kang, Jun; Şahin, Hasan; Özaydın, H. Duygu; Senger, Ramazan Tuğrul; Peeters, François M.The electronic properties, carrier mobility, and strain response of TiS3 nanoribbons (TiS3 NRs) are investigated by first-principles calculations. We found that the electronic properties of TiS3 NRs strongly depend on the edge type (a or b). All a-TiS3 NRs are metallic with a magnetic ground state, while b-TiS3 NRs are direct band gap semiconductors. Interestingly, the size of the band gap and the band edge position are almost independent of the ribbon width. This feature promises a constant band gap in a b-TiS3 NR with rough edges, where the ribbon width differs in different regions. The maximum carrier mobility of b-TiS3 NRs is calculated by using the deformation potential theory combined with the effective mass approximation and is found to be of the order 103cm2V-1s-1. The hole mobility of the b-TiS3 NRs is one order of magnitude lower, but it is enhanced compared to the monolayer case due to the reduction in hole effective mass. The band gap and the band edge position of b-TiS3 NRs are quite sensitive to applied strain. In addition we investigate the termination of ribbon edges by hydrogen atoms. Upon edge passivation, the metallic and magnetic features of a-TiS3 NRs remain unchanged, while the band gap of b-TiS3 NRs is increased significantly. The robust metallic and ferromagnetic nature of a-TiS3 NRs is an essential feature for spintronic device applications. The direct, width-independent, and strain-tunable band gap, as well as the high carrier mobility, of b-TiS3 NRs is of potential importance in many fields of nanoelectronics, such as field-effect devices, optoelectronic applications, and strain sensors.Article Citation - WoS: 45Citation - Scopus: 43Tuning the Magnetic Anisotropy in Single-Layer Crystal Structures(American Physical Society, 2015) Torun, Engin; Şahin, Hasan; Bacaksız, Cihan; Senger, Ramazan Tugrul; Peeters, François M.The effect of an applied electric field and the effect of charging are investigated on the magnetic anisotropy (MA) of various stable two-dimensional (2D) crystals such as graphene, FeCl2, graphone, fluorographene, and MoTe2 using first-principles calculations. We found that the magnetocrystalline anisotropy energy of Co-on-graphene and Os-doped-MoTe2 systems change linearly with electric field, opening the possibility of electric field tuning MA of these compounds. In addition, charging can rotate the easy-axis direction of Co-on-graphene and Os-doped-MoTe2 systems from the out-of-plane (in-plane) to in-plane (out-of-plane) direction. The tunable MA of the studied materials is crucial for nanoscale electronic technologies such as data storage and spintronics devices. Our results show that controlling the MA of the mentioned 2D crystal structures can be realized in various ways, and this can lead to the emergence of a wide range of potential applications where the tuning and switching of magnetic functionalities are important.