Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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  • Article
    Citation - WoS: 40
    Citation - Scopus: 42
    Free-Space Quantum Key Distribution With Single Photons From Defects in Hexagonal Boron Nitride
    (Wiley, 2022) Samaner, Çağlar; Paçal, Serkan; Mutlu, Görkem; Uyanık, Kıvanç; Ateş, Serkan
    Efficient single photon generation is an important requirement for several practical applications in quantum technologies, including quantum cryptography. A proof-of-concept demonstration of free-space quantum key distribution (QKD) is presented with single photons generated from an isolated defect in hexagonal boron nitride (hBN). The bright source operating at room temperature is integrated into a QKD system based on B92 protocol and a sifted key rate of 238 bps with a quantum bit error rate of 8.95% are achieved at 1 MHz clock rate. The effect of temporal filtering of detected photons on the performance of QKD parameters is also studied. It is believed that these results will stimulate the research on optically active defects in hBN as well as other 2D-based quantum emitters and their applications within quantum information technologies including practical QKD systems.
  • Conference Object
    Reversible Energy Transfer Between a Single Defect in Hbn and Graphene
    (OSA - The Optical Society, 2019) Özçeri, Elif; Arı, Ozan; Balcı, Sinan; Kocabaş, Coşkun; Ateş, Serkan
    We present a reversible energy transfer between a single defect in hBN and graphene. Dynamic control of Fermi level of graphene results in switching on and off single photon emission from a single quantum emitter. © OSA 2019 © 2019 The Author(s)
  • Conference Object
    Influence of Electron-Phonon Interactions on the Spectral Properties of Defects in Hexagonal Boron Nitride
    (OSA - The Optical Society, 2019) Arı, Ozan; Fırat, Volkan; Polat, Nihat; Çakır, Özgür.; Ateş, Serkan
    We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (˜ 6.5 meV) with a Debye-Waller factor of 0.59 is observed. © OSA 2019 © 2019 The Author(s)