Influence of Electron-Phonon Interactions on the Spectral Properties of Defects in Hexagonal Boron Nitride
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Abstract
We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (˜ 6.5 meV) with a Debye-Waller factor of 0.59 is observed. © OSA 2019 © 2019 The Author(s)
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Quantum Information and Measurement, QIM 2019 -- 4 April 2019 through 6 April 2019 -- -- 142378
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0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences
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Part F165-QIM 2019
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