Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Subject: search.filters.subject.Epitaxy

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 8
    An Interface Study of Crystalline Fe/Ge Multilayers Grown by Molecular Beam Epitaxy
    (Elsevier Ltd., 2011) Tarı, Süleyman
    Fe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The structural, electronic and magnetic properties of Fe/Ge have been studied. The analysis shows that Fe grows in a layer-by-layer epitaxial growth mode on Ge(0 0 1) substrates at 150 ◦C and no intermixing has been observed. Growth of a crystalline Ge film at 150 ◦C on a single crystal Fe film has been observed. At this temperature Ge films grow by means of the island growth mode according to reflection of high energy electron diffraction patterns. Fe layers of 36nm thickness, deposited at 150 ◦C on Ge(0 0 1) substrates, show two magnetization reversal values indicating the growth of Fe in two different crystal orientations. 36nm thick Fe and Ge layers grown at 150 ◦C in Ge/Fe/Ge/Fe/Ge(0 0 1) sequence shows ferromagnetic behavior, however, the same structure grown at 200 ◦C shows paramagnetic behavior.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Znte/Gaas(2 1 1)b Heterojunction Valence Band Discontinuity Measured by X-Ray Photoelectron Spectroscopy
    (Elsevier Ltd., 2011) Wang, X. J.; Tarı, Süleyman; Sporken, R.; Sivananthan, S.
    Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Effect of Deposition Conditions on Yba2cu3o 7-? Thin Films by Inverted Cylindrical Magnetron Sputtering and Substrate Effects
    (Elsevier Ltd., 2004) Avcı, İlbeyi; Tepe, Mustafa; Abukay, Doğan
    The dependence of YBCO thin film properties on the deposition conditions was studied for different substrates. The deposition conditions were optimized for the epitaxial growth of high quality YBCO thin films of 1500 Å thickness onto single crystal (100-oriented) SrTiO3 (STO), MgO and LaAlO3 (LAO) substrates by DC Inverted Cylindrical Magnetron Sputtering (ICMS). The samples were investigated in detail by means of X-ray diffraction analysis (XRD), EDX, AFM, ρ-T, magnetic susceptibility and current-voltage (I-V) characterizations. The samples show strong diamagnetic behavior and sharp transition temperatures of 89-91 K with ΔT < 0.5 K. XRD of the samples exhibited highly c-axis orientation. The full width at half maximum (FWHM) values of the rocking curves were ranging typically from 0.22 to 0.28°. The samples have smooth surfaces as shown from AFM micrographs. The surface roughness, Ra, changed between 5-7 nm. I-V characteristics were obtained from the 20μm-wide microbridges, which were patterned by a laser writing technique. The critical current densities (Jc, 1.06 × 106 for LAO-based YBCO, 1.39 × 106 for MgO-based YBCO, 1.67 × 106A/cm2 for STO based YBCO) of the microbridges were evaluated from I-V curves at 77 K.