Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Subject: search.filters.subject.Schottky barrier diodes

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  • Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Graphene/Soi-based Self-Powered Schottky Barrier Photodiode Array
    (American Institute of Physics, 2022) Yanılmaz, Alper; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, Cem
    We have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ∼1.36 and ∼1.27 μs rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 × 1012 Jones and a substantially small noise equivalent power of ∼0.14 pW/Hz-1/2. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams
    (Polish Academy of Sciences, 2013) Havare, A. Kemal; Okur, Salih; Yağmurcukardeş, Nesli; Can, M.; Aydın, H.; Şeker, M.; Demiç, Şerafettin
    In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.