Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams
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Yes
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Abstract
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
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Keywords
Characterization, Atomic force microscopy, Schottky barrier diodes, Ideality factors, Atomic force microscopy, Characterization, Schottky barrier diodes, Ideality factors
Fields of Science
02 engineering and technology, 0210 nano-technology, 01 natural sciences, 0104 chemical sciences
Citation
Havare, A. K., Okur, S., Yağmurcukardeş, N., Can, M., Aydın, H., Şeker, M., and Demiç, Ş. (2013). Electrical characterizations of schottky diodes on ITO Modified by Aromatic SAMs. Acta Physica Polonica A, 123(2), 456-458. doi:10.12693/APhysPolA.123.456
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3
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123
Issue
2
Start Page
456
End Page
458
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