Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 11Citation - Scopus: 10Intercalation Leads To Inverse Layer Dependence of Friction on Chemically Doped Mos2(IOP Publishing, 2023) Açıkgöz, Oğulcan; Guerrero, Enrique; Yanılmaz, Alper; Dağdeviren, Ömür E.; Çelebi, Cem; Strubbe, David A.; Baykara, Mehmet Z.We present results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the widespread observation of decreasing friction with increasing number of layers on two-dimensional (2D) materials, friction on Re-doped MoS2 exhibits an anomalous, i.e. inverse, dependence on the number of layers. Raman spectroscopy measurements combined with ab initio calculations reveal signatures of Re intercalation. Calculations suggest an increase in out-of-plane stiffness that inversely correlates with the number of layers as the physical mechanism behind this remarkable observation, revealing a distinctive regime of puckering for 2D materials.Article Citation - WoS: 4Citation - Scopus: 4Light-Induced Modification of the Schottky Barrier Height in Graphene/Si Based Near-Infrared Photodiodes(Elsevier, 2022) Fidan, Mehmet; Dönmez, Gülçin; Yanılmaz, Alper; Ünverdi, Özhan; Çelebi, CemThe impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.Article Citation - WoS: 52Citation - Scopus: 64Epitaxial Graphene Contact Electrode for Silicon Carbide Based Ultraviolet Photodetector(IOP Publishing Ltd., 2015) Kuşdemir, Erdi; Özkendir, Dilce; Fırat, Volkan; Çelebi, CemWe present the fabrication and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial graphene and SiC semiconductor. As-grown single layer epitaxial graphene is interdigitated as transparent conductive electrode to probe photo-generated charge carriers in a semi-insulating 4H-SiC substrate. The fabricated device exhibits the typical current-voltage characteristics of a conventional metal-semiconductor-metal type photodetector with low leakage current. Time-resolved photocurrent measurements suggest an excellent photocurrent reversibility and high response speed of the device. The measurements performed for different illumination wavelengths showed that the sample reveals higher responsivity values when it is exposed to the light with 254 nm wavelength. The obtained results imply that epitaxial graphene can be used readily as transparent conductive electrode for SiC based optoelectronic device applications.Article Citation - WoS: 6Citation - Scopus: 6Adsorbate-Induced Enhancement of the Spectral Response in Graphene/Silicon-based Schottky Barrier Photodetectors(Springer Verlag, 2020) Sahan, N.; Fidan, Mehmet; Çelebi, CemThe impact of atmospheric adsorbates on the spectral response and response speed of p-type graphene/n-type Silicon (p-Gr/n-Si) based Schottky barrier photodetectors are investigated. Wavelength resolved photocurrent and transient photocurrent spectroscopy measurements conducted under high-vacuum conditions revealed that the atmospheric adsorbates such as O-2 and H2O stuck on graphene electrode lead to hole doping in graphene and therefore shift its Fermi level towards higher energy states below its Dirac point. Such a shift in graphene's Fermi level due to adsorbates increases the zero-bias Schottky barrier height of the p-Gr/n-Si heterojunction from 0.71 to 0.78 eV. Adsorbate induced increment in the barrier height promotes the separation of photo-generated charge carriers at the depletion region and leads to an improvement in the maximum spectral response (e.g., from 0.39 to 0.46 AW(-1)) and response speed of the p-Gr/n-Si photodetector in the near-infrared region. The experimentally obtained results are expected to give an insight into the adsorbate related variations in the rectification and photo-response characters of the heterojunctions of graphene and other 2D materials with different semiconductors.Article Citation - WoS: 3Citation - Scopus: 4Lipid Bilayer on Wrinkled-Interfaced Graphene Field Effect Transistor(Elsevier Ltd., 2021) Özkendir İnanç, Dilce; Çelebi, Cem; Yıldız, Ümit HakanThis study describes lipid bilayer-based sensor interface on SiO2 encapsulated graphene field effect transistors (GFET). The SiO2 layer was utilized as a lipid compatible surface that drives bilayer formation. The two types of surface morphologies i) wrinkled morphology by thermal evaporation (TE) and ii) flat morphology by pulsed electron deposition (PED) were obtained. The sensing performance of wrinkled and flat interfaced-GFETs were investigated, pH sensitivity of wrinkled interfaced-GFETs were found to be ten fold larger than the flat ones. The enhanced sensitivity is attributed to thinning of the oxide layer by formation of wrinkles thereby facilitating electrostatic gating on graphene. We foresee that described wrinkled SiO2 interfaced-GFET holds promise as a cell membrane mimicking sensing platform for novel bioelectronic applications. © 2020Article Citation - WoS: 10Citation - Scopus: 10The Comparison of Transient Photocurrent Spectroscopy Measurements of Pulsed Electron Deposited Zno Thin Film for Air and Vacuum Ambient Conditions(Elsevier, 2019) Özdoğan, Mehmet; Yiğen, Serap; Çelebi, Cem; Utlu, GökhanPhotoconduction mechanism of ZnO thin films that produced by Pulsed Electron Deposition method is systematically investigated by taking Transient Photocurrent Spectroscopy measurements for different atmospheres including high vacuum and air environments. Response and recovery rates of photocurrent in the air are faster than the rates in high vacuum condition. The results in the presented work clearly indicate that the photoconduction of ZnO thin films with high surface-area-to-volume ratio are surface-related and mostly governed by adsorption/desorption of oxygen and water molecules in the atmosphere. Therefore, the high surface interaction tendency of ZnO surface with the atmosphere inevitably leads to charge transfer from surface to adsorbates and/or vice versa.Article Citation - WoS: 2Citation - Scopus: 2Impact of Encapsulation Method on the Adsorbate Induced Electrical Instability of Monolayer Graphene(AVS Science and Technology Society, 2019) Kalkan, Sırrı Batuhan; Yanılmaz, Alper; Çelebi, CemMonolayer graphene transferred onto a set of silicon carbide (SiC) substrates was encapsulated with a thin SiO2 film in order to prevent its interaction with atmospheric adsorbates. The encapsulation of graphene samples was realized by using two different thin film growth methods such as thermal evaporation (TE) and state-of-the-art pulsed electron deposition (PED). The encapsulation efficiency of these two techniques on the structural and electrical characteristics of graphene was compared with each other. Scanning electron microscopy (SEM) analysis showed that unlike the SiO2 thin film grown with PED, structural defects like cracks were readily formed on TE grown films due to the lack of surface wettability. The electronic transport measurements revealed that the electrical resistivity of graphene has been increased by two orders of magnitude, and the carrier mobility has been subsequently decreased upon the encapsulation process with the PED method. However, in-vacuum transient photocurrent spectroscopy (TPS) measurements conducted for short periods and a few cycles showed that the graphene layer encapsulated with the PED grown SiO2 film is electrically far more stable than the one encapsulated with TE grown SiO2 film. The results of TPS measurements were related to the SEM images to unravel the mechanism behind the improved electrical stability of graphene samples encapsulated with the PED grown SiO2 film.Article Citation - WoS: 24Citation - Scopus: 25Performance Enhancement of Inverted Perovskite Solar Cells Through Interface Engineering by Tpd Based Bidentate Self-Assembled Monolayers(Elsevier, 2020) Arkan, Emre; Arkan, M. Zeliha Yiğit; Ünal, Muhittin; Yalçın, Eyüp; Aydın, Hasan; Çelebi, Cem; Demic, ŞerafettinPerovskite solar cells (PSCs) have recently appeared as a promising photovoltaic technology and attracted great interest in both photovoltaic industry and academic community. Numerous active researches related to the material processing and operational aspects of device fabrication are under progress since PSCs have a great potential for attaining higher performance compared to that of other solar cell technologies. In particular, interfacial engineering is a crucial issue for obtaining high efficiency in solar cells where perovskite absorber layer is deposited between hole and electron transport layers. In inverted type architecture, PEDOT:PSS is used as both hole transport layer and surface modifier; but unfortunately, this material bears instability due to its acidic nature. Thus, self-assembled monolayers (SAMs) not only are considered as suitable alternative, but also their application is regarded as an efficient and cost effective method to modify electrode surface since it provides a robust and stable surface coverage. In this context, we have employed two novel N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) based SAM molecules to customize indium tin oxide (ITO) surface in inverted type PSCs. Furthermore, fine-tuning of spacer groups enables us to study device performance depending on molecular structure. This study proposes promising materials for anode interface engineering and provides a feasible approach for production of organic semiconductor based SAMs to achieve high performance PSCs.Article Citation - WoS: 28Citation - Scopus: 30P3HT-graphene bilayer electrode for Schottky junction photodetectors(IOP Publishing Ltd., 2018) Aydın, Hasan; Kalkan, Sırrı Batuhan; Varlıklı, Canan; Çelebi, CemWe have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.Article Citation - WoS: 6Citation - Scopus: 6Few-Layer Mos2 as Nitrogen Protective Barrier(IOP Publishing Ltd., 2017) Akbalı, Barış; Yanılmaz, Alper; Tomak, Aysel; Tongay, Sefaattin; Çelebi, Cem; Şahin, HasanWe report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.