Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Author: search.filters.author.Kasap, Safa O.WoS Q: search.filters.wosQuartile.Q2

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  • Conference Object
    Citation - WoS: 1
    Citation - Scopus: 1
    Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films
    (Springer Verlag, 2003) Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Finger, Friedhelm; Lambertz, Andreas
    Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity.
  • Conference Object
    Citation - WoS: 1
    Citation - Scopus: 2
    Conductance Fluctuations in A-Si:h: Effects of Alloying and Device Structure
    (Springer Verlag, 2003) Kasap, Safa O.; Güneş, Mehmet; Johanson, Robert E.; Wang, Q.; Yang, Jeffrey; Guha, Subhendu
    We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a transverse and coplanar electrode geometry. For a-Si:H with coplanar electrodes, the noise spectrum is not a pure f-α power law but consists of two linear regions with different slope parameters α. The spectral shape and its temperature dependence are similar for all samples, regardless of the growth technique. Adding Ge results in qualitatively similar spectra; however, α at high frequencies and the temperature dependence are altered. For both a-Si:H and a-SiGe:H with transverse electrodes, the noise spectra are pure f-α power laws, and α decreases with the Ge content.