Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films
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Abstract
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity.
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Thin films, Coplanar conductance, Crystalline materials, Hydrogenation, Plasma enhanced chemical vapor deposition, Silicon, Plasma enhanced chemical vapor deposition, Silicon, Thin films, Coplanar conductance, Crystalline materials, Hydrogenation
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Güneş, M., Johanson, R. E., Kasap, S. O., Finger, F., and Lambertz, A. (2003). Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 731-732. doi:10.1023/A:1026199608881
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1
Volume
14
Issue
10-12
Start Page
731
End Page
732
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Scopus : 1
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