Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films
Loading...
Files
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Open Access Color
Green Open Access
Yes
OpenAIRE Downloads
OpenAIRE Views
Publicly Funded
No
Abstract
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity.
Description
Fields of Science
Citation
Güneş, M., Johanson, R. E., Kasap, S. O., Finger, F., and Lambertz, A. (2003). Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 731-732. doi:10.1023/A:1026199608881
WoS Q
Q2
Scopus Q
Q2

OpenCitations Citation Count
1
Source
Journal of Materials Science: Materials in Electronics
Volume
14
Issue
10-12
Start Page
731
End Page
732
PlumX Metrics
Citations
CrossRef : 1
Scopus : 1
Captures
Mendeley Readers : 10
SCOPUS™ Citations
1
checked on Jun 13, 2026
Web of Science™ Citations
1
checked on Jun 13, 2026
Page Views
679
checked on Jun 13, 2026
Downloads
356
checked on Jun 13, 2026
Google Scholar™


